1SV304TPH3F

1SV304TPH3F

$0.32
  • Description:DIODE VARACTOR 10V USC
  • Series:-

SKU:9c6527b0a5c3 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE VARACTOR 10V USC
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Capacitance @ Vr, F:6.6pF @ 4V, 1MHz
  • Capacitance Ratio:3
  • Capacitance Ratio Condition:C1/C4
  • Voltage - Peak Reverse (Max):10 V
  • Diode Type:Single
  • Q @ Vr, F:-
  • Operating Temperature:125°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-76, SOD-323
  • Supplier Device Package:USC

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1SV304TPH3F

Overview

The Toshiba Semiconductor and Storage 1SV304TPH3F is a silicon epitaxial planar variable capacitance diode designed for VHF band radio voltage-controlled oscillators. It operates with a maximum reverse voltage of 10 V and supports junction temperatures up to 125 °C. The device provides a typical capacitance of 18.3 pF at 1 V and 6.1 pF at 4 V, measured at 1 MHz. It achieves a high capacitance ratio of 3.0 (typical) between 1 V and 4 V bias points. Electrical performance includes a low series resistance of 0.27 Ω at 470 MHz. The component is housed in a compact USC package.

Feature Summary

  • Engineered specifically for voltage-controlled oscillator applications within VHF band radio systems
  • Features a small physical footprint suitable for space-constrained surface mount designs
  • Delivers a high capacitance ratio to support effective frequency tuning ranges
  • Maintains low series resistance to minimize signal loss during operation

Applications

  • VHF band radio voltage-controlled oscillators
  • Frequency modulation circuits
  • Tuning networks for portable communication devices

Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm packaging configuration and compliance status. Ensure that the procurement channel sources components directly from authorized distributors or the manufacturer to guarantee authenticity. Confirm RoHS3 compliance requirements match the project specifications before finalizing orders.

Selection Notes

Select this component when designing VHF band radio circuits requiring a single-diode varactor solution. Evaluate the 10 V reverse voltage limit to ensure it aligns with the circuit's maximum operating bias. Consider the USC package dimensions for PCB layout constraints and verify that the 0.27 Ω series resistance meets the insertion loss requirements of the target application.

Part Context

This part belongs to the 1SV304 family of silicon epitaxial planar variable capacitance diodes manufactured by Toshiba Semiconductor and Storage. The base model designation remains consistent across different packaging options, with the suffix indicating specific handling and shipping configurations.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.

1SV304TPH3F1SV304TPH3F
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