SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Toshiba Semiconductor and Storage 1SV304TPH3F is a silicon epitaxial planar variable capacitance diode designed for VHF band radio voltage-controlled oscillators. It operates with a maximum reverse voltage of 10 V and supports junction temperatures up to 125 °C. The device provides a typical capacitance of 18.3 pF at 1 V and 6.1 pF at 4 V, measured at 1 MHz. It achieves a high capacitance ratio of 3.0 (typical) between 1 V and 4 V bias points. Electrical performance includes a low series resistance of 0.27 Ω at 470 MHz. The component is housed in a compact USC package.
Verify the specific ordering suffix against official Toshiba documentation to confirm packaging configuration and compliance status. Ensure that the procurement channel sources components directly from authorized distributors or the manufacturer to guarantee authenticity. Confirm RoHS3 compliance requirements match the project specifications before finalizing orders.
Select this component when designing VHF band radio circuits requiring a single-diode varactor solution. Evaluate the 10 V reverse voltage limit to ensure it aligns with the circuit's maximum operating bias. Consider the USC package dimensions for PCB layout constraints and verify that the 0.27 Ω series resistance meets the insertion loss requirements of the target application.
This part belongs to the 1SV304 family of silicon epitaxial planar variable capacitance diodes manufactured by Toshiba Semiconductor and Storage. The base model designation remains consistent across different packaging options, with the suffix indicating specific handling and shipping configurations.
Publicly confirmed substitute part numbers are not available in the provided source material.