1SV277TPH3F

Overview

The Toshiba Semiconductor and Storage 1SV277TPH3F is a silicon epitaxial planar variable capacitance diode designed for UHF band radio voltage-controlled oscillators. It features a high capacitance ratio of 2.3 (typical) at 1V to 4V reverse bias, with a typical series resistance of 0.42 Ω at 470 MHz. The device operates within a maximum reverse voltage of 10 V and a junction temperature range up to 125 °C. Capacitance values are specified as 4.5 pF (typ.) at 1 V and 2.0 pF (typ.) at 4 V, measured at 1 MHz.

Feature Summary

• High capacitance ratio suitable for stable tuning applications
• Low series resistance for efficient RF signal handling
• Compact package design optimized for space-constrained circuits

Applications

• Voltage-controlled oscillators (VCO) for UHF band radio systems

Procurement Notes

Verify the component authenticity by checking the marking code '1-1E1A' on the SOD-523 package against official Toshiba Semiconductor documentation. Confirm that the specific suffix TPH3F corresponds to the required tape-and-reel packaging format before finalizing procurement orders.

Selection Notes

Select this component when designing UHF band radio circuits requiring a compact variable capacitance diode with low series resistance. Ensure the operating reverse voltage remains below the 10 V absolute maximum rating and verify that the required capacitance ratio meets the oscillator's tuning linearity specifications.

Part Context

This part belongs to Toshiba's silicon epitaxial planar variable capacitance diode family. It is specifically engineered for small-size tuner applications where low total capacitance and minimal series resistance are critical for maintaining signal integrity in VHF and UHF frequency ranges.

Replacement Considerations

Consult Toshiba Semiconductor for officially confirmed substitute part numbers. Do not assume cross-compatibility with other manufacturers' variable capacitance diodes without verifying electrical characteristics and pin configurations.