1SV310TPH3F

Overview

The 1SV310TPH3F is a single silicon epitaxial planar varactor diode manufactured by Toshiba Semiconductor and Storage. Designed for VCO applications in UHF band radios, it features a maximum reverse voltage of 10 V and a junction temperature rating of 125 °C. Electrical characteristics at 25°C include a capacitance of 9.7 to 11.1 pF at 1 V reverse bias (1 MHz) and 4.45 to 5.45 pF at 4 V reverse bias (1 MHz). The device achieves a typical capacitance ratio (C1V/C4V) of 2.1 and exhibits a low series resistance of 0.28 Ω at 1 V and 470 MHz.

Feature Summary

• High capacitance ratio optimized for small size tuners
• Low series resistance suitable for high-frequency operation
• Silicon epitaxial planar construction

Applications

• Voltage Controlled Oscillators (VCO) for UHF Band Radio

Procurement Notes

Verify the component against the official Toshiba datasheet specifications before integration. Confirm that the USC package dimensions align with the target PCB layout. Ensure operating conditions remain within the absolute maximum ratings to maintain reliability standards defined in the manufacturer's handbook.

Selection Notes

Select this component when designing UHF band radio circuits requiring a compact tuner solution. The specific capacitance values and ratios must match the required tuning range. Verify thermal management capabilities to ensure the junction temperature does not exceed the 125 °C limit during continuous operation.

Part Context

This part belongs to the 1SV310 family of single varactor diodes. It utilizes the USC package, which corresponds to the SC-76 or SOD-323 footprint. The marking code on the device body is typically '1-1E1A'.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.