1SV324TPH3F

1SV324TPH3F

$0.36
  • Description:DIODE TCXO/VCO 10V USC
  • Series:-

SKU:047bc501b5a8 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE TCXO/VCO 10V USC
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Capacitance @ Vr, F:12pF @ 4V, 1MHz
  • Capacitance Ratio:4.3
  • Capacitance Ratio Condition:C1/C4
  • Voltage - Peak Reverse (Max):10 V
  • Diode Type:Single
  • Q @ Vr, F:-
  • Operating Temperature:125°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-76, SOD-323
  • Supplier Device Package:USC

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1SV324TPH3F

Overview

The Toshiba Semiconductor and Storage 1SV324TPH3F is a single silicon epitaxial planar varactor diode designed for TCXO and VCO applications. It operates with a maximum reverse voltage of 10 V and a junction temperature rating of 125 °C. The device provides a typical capacitance of 44 pF at 1 V reverse bias (1 MHz) and 9.2 pF at 4 V reverse bias. It achieves a high capacitance ratio of 4.3 (typical) between 1 V and 4 V conditions, alongside a low series resistance of 0.4 Ω (typical) at 100 MHz. The component is housed in the USC-2 package.

Feature Summary

  • High capacitance ratio for effective tuning performance
  • Low series resistance to minimize signal loss
  • Suitable for compact tuner designs

Applications

  • Temperature Compensated Crystal Oscillators (TCXO)
  • Voltage Controlled Oscillators (VCO)

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details such as reel or cut tape specifications. Confirm RoHS compliance status directly with the manufacturer or authorized distributors prior to procurement. Ensure that design parameters align with the absolute maximum ratings provided in the datasheet to maintain operational reliability.

Selection Notes

Select this component when a high capacitance ratio and low series resistance are required for oscillator circuits. Verify that the 10 V reverse voltage limit accommodates the circuit's peak reverse bias requirements. Consider the USC-2 package dimensions for surface mount layout constraints. Evaluate thermal management needs relative to the 125 °C junction temperature rating.

Part Context

The 1SV324 belongs to Toshiba's line of silicon epitaxial planar varactor diodes intended for frequency control applications. The 1SV324TPH3F designation indicates the specific surface-mount variant packaged for automated assembly processes. This part number represents a standardized offering within the broader 1SV324 family of components.

Replacement Considerations

Consult official Toshiba documentation for confirmed substitute part numbers. Cross-referencing requires matching electrical characteristics such as capacitance ratios, reverse voltage limits, and package dimensions.

1SV324TPH3F1SV324TPH3F
$0.36
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