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The Toshiba Semiconductor and Storage 1SV324TPH3F is a single silicon epitaxial planar varactor diode designed for TCXO and VCO applications. It operates with a maximum reverse voltage of 10 V and a junction temperature rating of 125 °C. The device provides a typical capacitance of 44 pF at 1 V reverse bias (1 MHz) and 9.2 pF at 4 V reverse bias. It achieves a high capacitance ratio of 4.3 (typical) between 1 V and 4 V conditions, alongside a low series resistance of 0.4 Ω (typical) at 100 MHz. The component is housed in the USC-2 package.
Verify the specific ordering suffix against official documentation to confirm packaging details such as reel or cut tape specifications. Confirm RoHS compliance status directly with the manufacturer or authorized distributors prior to procurement. Ensure that design parameters align with the absolute maximum ratings provided in the datasheet to maintain operational reliability.
Select this component when a high capacitance ratio and low series resistance are required for oscillator circuits. Verify that the 10 V reverse voltage limit accommodates the circuit's peak reverse bias requirements. Consider the USC-2 package dimensions for surface mount layout constraints. Evaluate thermal management needs relative to the 125 °C junction temperature rating.
The 1SV324 belongs to Toshiba's line of silicon epitaxial planar varactor diodes intended for frequency control applications. The 1SV324TPH3F designation indicates the specific surface-mount variant packaged for automated assembly processes. This part number represents a standardized offering within the broader 1SV324 family of components.
Consult official Toshiba documentation for confirmed substitute part numbers. Cross-referencing requires matching electrical characteristics such as capacitance ratios, reverse voltage limits, and package dimensions.