1SV281(TPH3,F)

1SV281(TPH3,F)

$0.30
  • Description:DIODE VCO V/UHF 10V ESC
  • Series:-

SKU:b4272bb55ab6 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE VCO V/UHF 10V ESC
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Capacitance @ Vr, F:8.7pF @ 4V, 1MHz
  • Capacitance Ratio:2
  • Capacitance Ratio Condition:C1/C4
  • Voltage - Peak Reverse (Max):10 V
  • Diode Type:Single
  • Q @ Vr, F:-
  • Operating Temperature:125°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-79, SOD-523
  • Supplier Device Package:ESC

Download product information

1SV281(TPH3,F)

Overview

The Toshiba Semiconductor and Storage 1SV281(TPH3,F) is a silicon epitaxial planar variable capacitance diode designed for V/UHF band radio applications. It operates with a maximum reverse voltage of 10 V and features a typical junction temperature rating of 125 °C. At 1 V reverse bias, the device exhibits a capacitance of 16 pF (typical), decreasing to 8.0 pF at 4 V. The component achieves a typical capacitance ratio of 2.0 between these voltages. Its series resistance measures 0.28 Ω at 470 MHz, supporting efficient tuning in compact designs.

Feature Summary

  • High capacitance ratio for effective frequency tuning
  • Low series resistance to minimize signal loss
  • Compact SMD package suitable for space-constrained tuner designs

Applications

  • VCO circuits for V/UHF band radios
  • Small size tuners
  • Frequency modulation systems

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Ensure storage conditions remain within specified limits to maintain component integrity during handling and assembly processes.

Selection Notes

Select this component when designing V/UHF band radio circuits requiring a single-variable capacitance diode. Evaluate the 10 V reverse voltage limit and 125 °C junction temperature against your system's operating parameters. Consider the low series resistance for high-frequency performance requirements in small-size tuner applications.

Part Context

This part belongs to the 1SV281 series of silicon epitaxial planar variable capacitance diodes manufactured by Toshiba Semiconductor and Storage. The series is engineered specifically for V/UHF band radio applications, offering a balance of high capacitance ratio and low series resistance within a compact surface-mount package.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with alternative components through direct electrical parameter comparison and physical footprint analysis before implementation.

FAQ

What is the typical capacitance ratio of the 1SV281?

The typical capacitance ratio (C1V / C4V) is 2.0.

What is the maximum reverse voltage rating?

The maximum reverse voltage rating is 10 V.

What is the typical series resistance at 470 MHz?

The typical series resistance is 0.28 Ω at 470 MHz.

1SV281(TPH3,F)1SV281(TPH3,F)
$0.30
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