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The Toshiba Semiconductor and Storage 1SV281(TPH3,F) is a silicon epitaxial planar variable capacitance diode designed for V/UHF band radio applications. It operates with a maximum reverse voltage of 10 V and features a typical junction temperature rating of 125 °C. At 1 V reverse bias, the device exhibits a capacitance of 16 pF (typical), decreasing to 8.0 pF at 4 V. The component achieves a typical capacitance ratio of 2.0 between these voltages. Its series resistance measures 0.28 Ω at 470 MHz, supporting efficient tuning in compact designs.
Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Ensure storage conditions remain within specified limits to maintain component integrity during handling and assembly processes.
Select this component when designing V/UHF band radio circuits requiring a single-variable capacitance diode. Evaluate the 10 V reverse voltage limit and 125 °C junction temperature against your system's operating parameters. Consider the low series resistance for high-frequency performance requirements in small-size tuner applications.
This part belongs to the 1SV281 series of silicon epitaxial planar variable capacitance diodes manufactured by Toshiba Semiconductor and Storage. The series is engineered specifically for V/UHF band radio applications, offering a balance of high capacitance ratio and low series resistance within a compact surface-mount package.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with alternative components through direct electrical parameter comparison and physical footprint analysis before implementation.
The typical capacitance ratio (C1V / C4V) is 2.0.
The maximum reverse voltage rating is 10 V.
The typical series resistance is 0.28 Ω at 470 MHz.