SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Toshiba Semiconductor and Storage 1SV279,H3F is a silicon epitaxial planar variable capacitance diode designed for V/UHF band radio applications. It features a maximum reverse voltage of 15 V and operates within a junction temperature range up to 125 °C. Electrical characteristics include a typical capacitance of 14 pF at 2 V reverse bias and 6 pF at 10 V reverse bias, both measured at 1 MHz. The device achieves a typical capacitance ratio (C2V/C10V) of 2.5 and exhibits a low series resistance of 0.2 Ω at 470 MHz. It is housed in a JEDEC-standard surface-mount package.
Verify the specific H3F suffix against the manufacturer's current documentation to confirm compliance with RoHS directives and REACH regulations. Confirm that the component status remains active or qualified for your specific design timeline, as availability may vary by region.
Select this component when a high capacitance ratio and low series resistance are required for V/UHF frequency tuning. Ensure the circuit design accommodates the 15 V peak reverse voltage limit and verify thermal management capabilities for junction temperatures reaching 125 °C.
This part belongs to the Toshiba 1SV279 family of variable capacitance diodes. It utilizes a silicon epitaxial planar structure optimized for radio frequency tuning applications. The device is intended for use in consumer electronics requiring small form factor tuners.
Consult official distributor databases for cross-reference data. Verify pinout compatibility and electrical parameter alignment before substituting with components from other manufacturers.
The typical capacitance ratio (C2V/C10V) is 2.5.
The maximum junction temperature is 125 °C.
The typical series resistance is 0.2 Ω at 470 MHz.