1SV279,H3F

1SV279,H3F

$0.30
  • Description:PB-F ESC VARICAP DIODE (HF), IR=
  • Series:-

SKU:eadc1923c588 Category: Brand:

  
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Product Detailed Parameters

  • Description:PB-F ESC VARICAP DIODE (HF), IR=
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Capacitance @ Vr, F:6.5pF @ 10V, 1MHz
  • Capacitance Ratio:2.5
  • Capacitance Ratio Condition:C2/C10
  • Voltage - Peak Reverse (Max):15 V
  • Diode Type:Single
  • Q @ Vr, F:-
  • Operating Temperature:125°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-79, SOD-523
  • Supplier Device Package:ESC

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1SV279,H3F

Overview

The Toshiba Semiconductor and Storage 1SV279,H3F is a silicon epitaxial planar variable capacitance diode designed for V/UHF band radio applications. It features a maximum reverse voltage of 15 V and operates within a junction temperature range up to 125 °C. Electrical characteristics include a typical capacitance of 14 pF at 2 V reverse bias and 6 pF at 10 V reverse bias, both measured at 1 MHz. The device achieves a typical capacitance ratio (C2V/C10V) of 2.5 and exhibits a low series resistance of 0.2 Ω at 470 MHz. It is housed in a JEDEC-standard surface-mount package.

Feature Summary

  • High capacitance ratio suitable for compact tuner designs
  • Low series resistance for improved RF performance
  • Silicon epitaxial planar construction

Applications

  • VCO circuits for V/UHF band radios
  • Compact electronic tuner modules

Procurement Notes

Verify the specific H3F suffix against the manufacturer's current documentation to confirm compliance with RoHS directives and REACH regulations. Confirm that the component status remains active or qualified for your specific design timeline, as availability may vary by region.

Selection Notes

Select this component when a high capacitance ratio and low series resistance are required for V/UHF frequency tuning. Ensure the circuit design accommodates the 15 V peak reverse voltage limit and verify thermal management capabilities for junction temperatures reaching 125 °C.

Part Context

This part belongs to the Toshiba 1SV279 family of variable capacitance diodes. It utilizes a silicon epitaxial planar structure optimized for radio frequency tuning applications. The device is intended for use in consumer electronics requiring small form factor tuners.

Replacement Considerations

Consult official distributor databases for cross-reference data. Verify pinout compatibility and electrical parameter alignment before substituting with components from other manufacturers.

FAQ

What is the typical capacitance ratio of the 1SV279?

The typical capacitance ratio (C2V/C10V) is 2.5.

What is the maximum operating junction temperature?

The maximum junction temperature is 125 °C.

What is the series resistance at 470 MHz?

The typical series resistance is 0.2 Ω at 470 MHz.

1SV279,H3F1SV279,H3F
$0.30
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