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The Toshiba 1SV307(TPH3,F) is a silicon epitaxial PIN diode designed for VHF tuner band switching applications. It features a USC-2 package with a total capacitance of 0.3 pF (typical) and low series resistance of 1.1 Ω at 1.5 GHz. The device supports a maximum reverse voltage of 30 V and a forward current of 50 mA, operating within a junction temperature range of -55°C to +125°C.
Verify the component against the official Toshiba datasheet specifications before integration. Confirm that the USC-2 package dimensions align with the PCB footprint requirements. Ensure the selected variant matches the required electrical tolerances for the specific RF application environment.
Select this component when low parasitic capacitance and minimal insertion loss are critical for VHF frequency operations. Evaluate the thermal management capabilities to ensure the junction temperature remains within the specified operational limits during continuous use under heavy loads.
This part belongs to the Toshiba 1SV307 series of silicon epitaxial PIN diodes. It is specifically engineered for radio frequency switching tasks where small physical size and precise electrical characteristics are necessary for maintaining signal integrity in tuner band applications.
Consult the manufacturer's documentation for verified substitute part numbers. Cross-referencing should be performed based on identical package types and matching electrical parameters to ensure functional compatibility.