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The 1SV308,L3F is a Radio-Frequency PIN diode manufactured by Toshiba Semiconductor and Storage, designed for VHF tuner band applications. It features a peak reverse voltage of 30V and a maximum forward current of 50 mA. The device exhibits a capacitance of 0.5pF at 1V/1MHz and an on-resistance of 1.5 Ohm at 10mA/100MHz. It operates within a junction temperature range up to 125°C and is housed in the SOD-523 (ESC) surface-mount package.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the received parts match the specific L3F suffix requirements for lead-free compliance and RoHS3 standards. Ensure storage conditions adhere to moisture sensitivity level 1 guidelines to prevent package degradation prior to soldering.
Select this component when designing circuits requiring RF switching or attenuation within the VHF band. The 30V peak reverse voltage rating must align with the system's maximum operating voltages. Consider the 0.5pF capacitance value for high-frequency signal integrity requirements and ensure the PCB layout accommodates the SOD-523 footprint dimensions.
This part belongs to Toshiba's discrete semiconductor product line focusing on radio-frequency components. It serves as a specialized solution for managing signal paths in broadcast and communication hardware. The device complements other RF switches and diodes in the manufacturer's portfolio, targeting miniaturized electronic designs.
Consult official Toshiba documentation for verified substitute part numbers. Cross-reference electrical parameters such as breakdown voltage, capacitance, and package type before considering alternative manufacturers. Ensure any replacement maintains compatibility with VHF frequency operations and thermal limits.