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Product Detailed Parameters
- Description：DIODE VARACTOR 10V ESC
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Capacitance @ Vr, F：5.45pF @ 4V, 1MHz
- Capacitance Ratio：2.1
- Capacitance Ratio Condition：C1/C4
- Voltage - Peak Reverse (Max)：10 V
- Diode Type：Single
- Q @ Vr, F：-
- Operating Temperature：125°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-79, SOD-523
- Supplier Device Package：ESC
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Overview
The Toshiba Semiconductor and Storage 1SV311 is a silicon epitaxial planar varactor diode designed for UHF band radio voltage-controlled oscillators (VCO). It features a high capacitance ratio of 2.1 at typical conditions and low series resistance of 0.28 ohms. The device operates with a maximum reverse voltage of 10 V and a junction temperature limit of 125 °C. Capacitance values range from 9.7 pF to 11.1 pF at 1 V reverse bias, and 4.45 pF to 5.45 pF at 4 V reverse bias, both measured at 1 MHz frequency.
Feature Summary
- High capacitance ratio for effective tuning
- Low series resistance for improved performance
- Suitable for compact tuner designs
Applications
- UHF band radio voltage-controlled oscillators
- Small size tuner applications
Procurement Notes
Verify the specific ordering suffix against official Toshiba documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status directly with the manufacturer or authorized distributor prior to procurement. Ensure the component meets all environmental and export control regulations applicable to your region before finalizing purchase orders.
Selection Notes
Select this component when designing UHF band circuits requiring a high capacitance ratio and minimal series resistance. Verify that the 10 V reverse voltage rating aligns with the circuit's operating conditions. Consider the small form factor benefits for space-constrained tuner layouts. Ensure thermal management supports the specified junction temperature limits during operation.
Part Context
This component belongs to Toshiba's silicon epitaxial planar diode family, specifically engineered for RF and microwave applications. It serves as a key element in variable capacitance tuning circuits within communication equipment. The design focuses on providing stable electrical characteristics across varying reverse bias voltages for consistent oscillator performance.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Consult Toshiba sales representatives for potential alternative components if this part is discontinued or unavailable.
FAQ
What is the typical capacitance ratio of the 1SV311?
The typical capacitance ratio (C1V/C4V) is 2.1.
What is the maximum reverse voltage rating?
The maximum reverse voltage (VR) is 10 V.
What is the typical series resistance value?
The typical series resistance (rs) is 0.28 Ω at 1 V reverse bias and 470 MHz frequency.
