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The 23S08E-5HDCG8 is an 8-bit serial EEPROM manufactured by Renesas Electronics Corporation. It features a page write buffer of 4 bytes and supports two-wire serial interface communication. The device operates within a voltage range of 1.8V to 5.5V, ensuring compatibility with various logic levels. It offers high endurance with 1 million write cycles and data retention exceeding 40 years. The component is available in an 8-pin TSSOP package, suitable for space-constrained applications requiring non-volatile memory storage.
Verify the exact ordering code matches the required speed grade and package variant. Confirm voltage specifications align with target system requirements. Check for any specific tape and reel or tube packaging options if applicable. Ensure compliance with RoHS directives and environmental standards relevant to the deployment region.
Consider the page write buffer size when designing write-intensive algorithms. Evaluate the operating voltage range against the host microcontroller's I/O levels. Assess the physical footprint constraints against the TSSOP package dimensions. Review the endurance specifications to ensure they meet the expected write cycle requirements of the application.
This component belongs to Renesas' serial EEPROM family designed for low-power and cost-sensitive applications. It complements other memory solutions by providing reliable non-volatile storage with simple interface protocols. The series is optimized for embedded systems requiring frequent updates to small data sets.
Direct substitutes may include other 8-bit serial EEPROMs with similar pinouts and interface protocols. Verify electrical characteristics and package dimensions before substitution. Consult official cross-reference lists for approved alternative part numbers.