SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Infineon Technologies 2EDR8259XXUMA1 is a dual-channel isolated gate driver IC designed for driving Si and SiC MOSFETs and GaN HEMTs. It features reinforced galvanic isolation via coreless transformer technology, providing a voltage class of 1200 V. The device operates with an input supply range of 3 V to 17 V and delivers a source current of 5 A and a sink current of 9 A. Key electrical parameters include a maximum propagation delay of 47 ns, rise time of 7.5 ns, and fall time of 6 ns. It is housed in a DSO-14 package and supports industrial operating temperatures from -40 °C to +125 °C.
Verify the specific suffix against official documentation to confirm exact configuration options, as ordering suffixes may indicate variations in packaging or tape-and-reel specifications without altering the core functional characteristics. Ensure compatibility with required isolation certifications such as UL 1577 and IEC 60747-17 for the target application environment.
Select this component when reinforced isolation is required for bus voltages up to 1200 V. The DSO-14 package offers increased channel-to-channel creepage compared to standard variants, facilitating PCB routing in high-pollution degree environments. Consider the 5 A source and 9 A sink currents for driving medium-power Si and SiC MOSFETs efficiently.
This part belongs to the EiceDRIVER™ 2EDRx259X family of dual-channel isolated gate drivers. These devices are engineered to provide accurate and stable timing control for power switches. The family shares common architectural features, including coreless transformer isolation and configurable dead-time control, tailored for robust performance in demanding industrial and automotive power electronics applications.
The 2EDR8258X is a related variant within the same family offering similar isolation and drive capabilities but may differ in specific timing parameters or insulation ratings. Verify pinout compatibility and electrical specifications before substitution.