2N1916

Overview

The Powerex Inc. 2N1916 is a silicon planar power NPN transistor designed for high-voltage, high-current switching and amplification applications. It features a hermetically sealed TO-3 metal case construction, providing robust thermal dissipation capabilities essential for power electronics. The device is characterized by a collector-emitter voltage rating of 400V and a continuous collector current capacity of 15A. Key electrical parameters include a DC current gain (hFE) ranging from 20 to 70 at specified operating conditions, ensuring reliable performance in linear and saturated switching modes. The component operates within a junction temperature range of -65°C to +200°C, supporting demanding industrial environments.

Feature Summary

• Hermetically sealed TO-3 metal package for superior thermal management and environmental protection
• High voltage capability with 400V collector-emitter breakdown rating
• Robust current handling with 15A continuous collector current specification
• Wide operating junction temperature range extending up to 200°C

Applications

• High-power audio amplifier output stages
• Industrial motor control circuits
• Voltage regulator pass elements
• General-purpose high-voltage switching applications

Procurement Notes

Verify the manufacturer date code and lot traceability upon receipt to ensure compliance with project specifications. Confirm that the TO-3 package leads are free from corrosion or physical damage prior to installation. Review the latest datasheet for any updates on recommended soldering profiles and thermal interface material requirements to maintain optimal heat dissipation performance during assembly.

Selection Notes

Select the 2N1916 when designing circuits requiring high voltage isolation combined with significant current handling in a standard TO-3 footprint. Ensure the thermal design accounts for the device's power dissipation limits under worst-case ambient conditions. Compare hFE variations across batches if precise biasing stability is critical for linear operation. Consider derating factors for elevated temperatures to guarantee long-term reliability in enclosed enclosures.

Part Context

The 2N1916 belongs to the legacy family of silicon planar power transistors widely used in mid-to-late 20th-century power electronics. It serves as a direct replacement for older military-grade equivalents in retrofitted equipment. While newer MOSFETs offer faster switching, this BJT remains relevant for its ruggedness and predictable linear behavior in analog power applications where gate drive complexity must be avoided.

Replacement Considerations

Direct pin-compatible substitutes include the 2N3055 for lower voltage requirements, though voltage ratings differ significantly. For exact 400V/15A TO-3 replacements, verify cross-reference lists from manufacturers like STMicroelectronics or ON Semiconductor for equivalent NPN power transistors such as the MJE3055T, ensuring thermal and electrical parameters match the original design constraints.