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The Microchip Technology 2N2060 is a dual NPN silicon small-signal bipolar junction transistor (BJT) housed in a TO-78-6 hermetic metal package. Designed for through-hole mounting, it supports a maximum DC collector current of 500 mA and operates with a collector-emitter voltage of 60 V. The device features a collector-base voltage rating of 100 V and an emitter-base voltage of 7 V. It dissipates up to 2.12 W of power and maintains a low collector-emitter saturation voltage of 300 mV. The component functions reliably within a temperature range of -65°C to +200°C, offering a minimum DC current gain of 25 at 10 uA and 5 V.
Verify the specific ordering suffix and qualification level when sourcing this component, as military-grade variants may carry distinct part numbers or documentation requirements. Confirm that the TO-78-6 package matches the target PCB footprint and that the supplier provides traceable quality certificates if the application demands strict compliance with defense or aerospace standards.
Select this component when a dual NPN topology is required in a hermetic package for high-temperature environments. Ensure the design accommodates the 2.12 W power dissipation limit and verify that the 500 mA current rating exceeds peak load requirements. Consider the TO-78-6 mechanical constraints during layout planning.
This device belongs to the Microchip Technology discrete semiconductor portfolio, specifically within the Bipolar Junction Transistor category. It serves as a ruggedized alternative to standard plastic-packaged transistors, targeting applications where environmental sealing and long-term reliability are critical specifications.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical ratings before considering any generic dual NPN alternatives.