2N2060

2N2060

$28.94
  • Description:TRANS 2NPN 60V 500MA TO-78-6
  • Series:-

SKU:4369a6076f14 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN 60V 500MA TO-78-6
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):500mA
  • Voltage - Collector Emitter Breakdown (Max):60V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 5V
  • Power - Max:600mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-78-6 Metal Can
  • Supplier Device Package:TO-78-6
  • Grade:-
  • Qualification:-

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2N2060

Overview

The Microchip Technology 2N2060 is a dual NPN silicon small-signal bipolar junction transistor (BJT) housed in a TO-78-6 hermetic metal package. Designed for through-hole mounting, it supports a maximum DC collector current of 500 mA and operates with a collector-emitter voltage of 60 V. The device features a collector-base voltage rating of 100 V and an emitter-base voltage of 7 V. It dissipates up to 2.12 W of power and maintains a low collector-emitter saturation voltage of 300 mV. The component functions reliably within a temperature range of -65°C to +200°C, offering a minimum DC current gain of 25 at 10 uA and 5 V.

Feature Summary

  • Dual NPN configuration integrated into a single hermetic metal package
  • High thermal stability enabling operation up to 200°C
  • Low saturation voltage for efficient switching performance

Applications

  • Military and aerospace switching circuits requiring radiation hardness
  • High-reliability analog signal processing
  • Industrial control systems operating in extreme temperatures

Procurement Notes

Verify the specific ordering suffix and qualification level when sourcing this component, as military-grade variants may carry distinct part numbers or documentation requirements. Confirm that the TO-78-6 package matches the target PCB footprint and that the supplier provides traceable quality certificates if the application demands strict compliance with defense or aerospace standards.

Selection Notes

Select this component when a dual NPN topology is required in a hermetic package for high-temperature environments. Ensure the design accommodates the 2.12 W power dissipation limit and verify that the 500 mA current rating exceeds peak load requirements. Consider the TO-78-6 mechanical constraints during layout planning.

Part Context

This device belongs to the Microchip Technology discrete semiconductor portfolio, specifically within the Bipolar Junction Transistor category. It serves as a ruggedized alternative to standard plastic-packaged transistors, targeting applications where environmental sealing and long-term reliability are critical specifications.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical ratings before considering any generic dual NPN alternatives.

2N20602N2060
$28.94
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