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The Microchip Technology 2N2480 is a dual small-signal bipolar junction transistor (BJT) array housed in a TO-78-6 metal can package. It integrates two NPN transistors on a single die to reduce parasitic inductance. The device supports a maximum collector current of 500 mA and a collector-emitter voltage of 40 V. It features a transition frequency of 50 MHz and a power dissipation rating of 600 mW, designed for through-hole mounting in switching and amplification applications.
Verify the manufacturer origin carefully, as the 2N2480 designation is used by multiple vendors including Central Semiconductor and Motorola. Confirm that the specific unit received matches the required TO-78-6 package and electrical specifications. Ensure the component is sourced from authorized distributors to guarantee authenticity and compliance with Microchip Technology standards.
Select this component when a dual NPN configuration is required within a compact metal can footprint. It is suitable for designs needing low parasitic inductance due to the integrated die structure. Consider the 500 mA current limit and 40 V voltage rating during circuit design to ensure operation remains within safe limits for both switching and amplification roles.
This part belongs to the Bipolar Transistor Arrays category. It serves as a dual-channel solution replacing discrete transistor pairs where space and parasitic performance are critical. The TO-78 package offers hermetic sealing capabilities, distinguishing it from standard plastic封装 alternatives in rugged environments.
Cross-reference with other manufacturers' 2N2480 equivalents such as those from Central Semiconductor or Motorola. Verify pinout compatibility and electrical parameter alignment before substitution. Note that ordering suffixes may indicate variations in testing or packaging; confirm functional equivalence rather than assuming interchangeability based solely on the base part number.