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Product Detailed Parameters
- Description：DUAL SMALL-SIGNAL BJT
- Series：*
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The Microchip Technology 2N2223A is a dual silicon NPN transistor array manufactured using an epitaxial planar process. This component integrates two individual NPN chips within a single hermetic TO-77 package, designed for high-reliability applications. It features a maximum collector-emitter voltage of 60V and supports continuous collector currents up to 500mA. The device exhibits a transition frequency of 50MHz and a power dissipation rating of 600mW, making it suitable for differential amplifier circuits requiring robust performance in demanding environments.
Feature Summary
- Dual NPN configuration utilizing two individual epitaxial planar chips
- Hermetic TO-77 package construction for enhanced reliability
- High-reliability screening options available for specialized applications
Applications
- Differential amplifier circuits
- High-reliability analog signal processing
- Military and aerospace electronic systems
Procurement Notes
Verify the specific manufacturer source when procuring this component, as multiple vendors including Central Semiconductor and Seme LAB produce identical part numbers. Confirm that the received unit matches the required hermetic TO-77 package style. Check for availability of high-reliability screening options if specified for your application. Note that some listings indicate this product may be obsolete or no longer actively manufactured by all original sources.
Selection Notes
Select the 2N2223A when a dual NPN configuration with hermetic sealing is required for critical applications. Ensure the design accommodates the 60V collector-emitter voltage limit and 500mA current capability. Consider the 50MHz transition frequency for high-speed switching needs. Verify package compatibility with existing thermal management solutions due to the metal TO-77 form factor.
Part Context
The 2N2223A belongs to a family of dual bipolar junction transistors designed for rugged environments. Unlike standard plastic-packaged dual transistors, this variant utilizes a hermetic metal case to protect against moisture and contaminants. It serves as a specialized alternative to single-transistor arrays where space efficiency and environmental resilience are prioritized over cost.
Replacement Considerations
Direct substitutes include other dual NPN transistors in hermetic packages such as the 2N2223. Verify pinout compatibility and electrical ratings before substitution. Generic plastic-packaged equivalents like the 2N2222A do not provide hermetic protection.
