2N2222AUB/TR

Single Bipolar Transistors Overview

The Microchip Technology 2N2222AUB/TR is a radiation-hardened NPN silicon switching transistor designed for high-reliability applications. It features a maximum collector current of 800 mA and a collector-emitter voltage rating of 50 V, with a power dissipation capacity of 500 mW. The device utilizes a surface-mount UB package (3-SMD, no lead) and operates within a temperature range of -65°C to +200°C. Qualified to MIL-PRF-19500/255 standards, it offers enhanced performance against ionizing radiation, making it suitable for aerospace and defense environments requiring robust small-signal bipolar junction transistor functionality.

Single Bipolar Transistors Feature Summary

• Radiation hardened design qualified to MIL-PRF-19500/255 levels for space and defense use
• High thermal stability supporting operation up to +200°C junction temperature
• Surface-mount UB package configuration for automated assembly integration
• Silicon NPN construction optimized for high-speed switching applications

Single Bipolar Transistors Applications

• Spacecraft avionics and satellite communication systems
• Military radar and electronic warfare subsystems
• High-altitude unmanned aerial vehicle control circuits
• Nuclear environment instrumentation signal processing

Single Bipolar Transistors Procurement Notes

Verify the specific radiation hardness level required for your mission profile, as the JANS series typically denotes military-grade qualification. Confirm that the UB surface-mount package aligns with your PCB footprint specifications. Ensure compliance with export control regulations such as ITAR or EAR, given the component's defense-oriented qualifications. Request the latest datasheet revision to confirm any recent manufacturing site changes or material updates before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when radiation tolerance and extended temperature operation are critical constraints. The UB package requires compatible surface-mount reflow profiles distinct from through-hole alternatives. Compare hFE gain ranges across different manufacturers if precise biasing is necessary, as variations exist between Microchip and other suppliers. Validate that the 50V VCEO rating meets the circuit's peak voltage requirements under all operating conditions.

Single Bipolar Transistors Part Context

This part belongs to the 2N2222 family of NPN switching transistors, widely recognized for general-purpose amplification and switching. The 2N2222AUB variant specifically adapts the standard TO-18 hermetic concept into a modern surface-mount form factor. Microchip Technology continues production of this legacy part number to support long-term availability in defense and aerospace sectors where redesign cycles are extensive and component substitution is restricted.

Single Bipolar Transistors Replacement Considerations

• JANSM2N2222AUB
• JANTX2N2222AUB

Single Bipolar Transistors FAQ

What is the radiation hardness level of the 2N2222AUB/TR?

It is qualified to MIL-PRF-19500/255, typically offering resistance to ionizing radiation suitable for space and defense applications.

Does the UB package affect the pinout compared to the TO-18 version?

Yes, the UB package uses a surface-mount 3-LCC configuration with no leads, differing physically from the traditional TO-18 axial or flange mount.

What is the maximum junction temperature for this transistor?

The maximum operating junction temperature is specified at +200°C, allowing for high-temperature environmental operation.