SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The TIP33A-S is an NPN silicon power transistor manufactured by Bourns Inc. It features a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 10A. The device is housed in the SOT-93 through-hole package, which supports a maximum power dissipation of 3.5W. This component is designed for high-current switching and amplification applications requiring robust performance within its specified electrical limits.
Verify the specific manufacturer datasheet for the TIP33A-S to confirm current product status and detailed electrical characteristics. Ensure that the SOT-93 package dimensions match the target PCB footprint requirements. Cross-reference the 60V and 10A ratings against the actual circuit load conditions to prevent overstress during operation.
Select this component when an NPN power transistor with 60V breakdown and 10A current capacity is required. The SOT-93 package is suitable for through-hole assembly processes. Consider thermal management solutions if operating near the 3.5W power dissipation limit to maintain reliability under sustained load conditions.
This part belongs to the single bipolar transistor category from Bourns Inc. It serves as a discrete power device for electronic circuits. The SOT-93 designation indicates a specific physical form factor distinct from other common transistor packages like TO-220 or TO-92.