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The BC847B is an NPN silicon plastic-encapsulated transistor in a SOT-23 package. It features a collector-emitter voltage of 45 V and a continuous collector current of 0.1 A. The device has a collector-base breakdown voltage of 50 V and an emitter-base voltage of 6 V. Power dissipation is rated at 200 mW with a junction temperature limit of 150 °C. DC current gain ranges from 200 to 450 at 2 mA collector current. Transition frequency is 100 MHz, and thermal resistance is 625 °C/W.
Verify the manufacturer datasheet AS-221704 for accurate electrical characteristics and mechanical dimensions. Confirm the specific marking code '1F' corresponds to the BC847B variant. Ensure the SOT-23 package outline matches the required pad layout for PCB design. Check RoHS compliance status if required by the manufacturing process.
Select this component when a general-purpose NPN transistor with moderate gain is required. The 45 V collector-emitter voltage suits low-voltage logic interfaces. The SOT-23 package provides a compact footprint for space-constrained designs. Verify that the 200 mW power dissipation rating meets the thermal requirements of the target application environment.
This part belongs to the BC84x series of plastic-encapsulated transistors. The series includes complementary PNP devices like the BC857B. These components are standard small-signal bipolar junction transistors widely used in consumer electronics and industrial control systems for signal processing and switching tasks.
BC847BT
The device marking code for the BC847B is 1F.
The maximum collector-emitter voltage (VCEO) is 45 V.
The DC current gain (hFE) ranges from 200 to 450 when measured at IC=2mA and VCE=5V.