BD246C-S

Overview

The BD246C-S is a PNP silicon bipolar junction transistor manufactured by Bourns. It features a collector-emitter voltage rating of -100 V and a continuous collector current capacity of -15 A. The device supports a maximum power dissipation of 80 W at 25°C case temperature, with an operating junction temperature range extending from -65°C to +150°C. It utilizes a flange mount package configuration.

Feature Summary

• High power handling capability for demanding circuit applications
• Robust voltage and current ratings suitable for industrial environments
• Flange mount construction for efficient thermal management

Applications

• Industrial motor control systems
• Power supply output stages
• General purpose switching circuits

Procurement Notes

Verify the specific suffix designation against official manufacturer documentation to confirm exact electrical tolerances and mechanical dimensions. Ensure compatibility with existing thermal interface materials and mounting hardware specifications before integration into final assemblies.

Selection Notes

Select this component based on its high current handling and robust voltage ratings. Consider the flange mount package for effective heat dissipation in high-power scenarios. Evaluate thermal resistance requirements and ensure adequate heatsinking solutions are available for sustained operation within the specified temperature limits.

Part Context

This component belongs to the BD246 series of PNP silicon transistors designed for high-power applications. The series offers varying voltage ratings across different suffixes, providing design flexibility for diverse electronic systems requiring reliable switching and amplification capabilities in industrial and commercial equipment.

Replacement Considerations

Consult official substitution guides for compatible alternatives. Verify pinout compatibility and thermal characteristics when considering cross-references.