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The MMBT4401 is an NPN silicon epitaxial planar transistor in a SOT-23 package. It supports a maximum collector-emitter voltage of 40 V and a collector-base voltage of 60 V, with an emitter-base voltage rating of 6 V. The device handles a continuous collector current of 600 mA and dissipates up to 225 mW on FR-5 boards or 300 mW on alumina substrates. Operating junction temperatures range from -55 °C to +150 °C. Electrical characteristics include a minimum DC current gain (hFE) of 20 at 150 mA and a transition frequency (fT) of 250 MHz.
Verify the specific ordering suffix against official documentation, as variants such as the halogen-free MMBT4401-H exist. Confirm RoHS compliance status directly with the manufacturer, as datasheet records may vary by production batch. Ensure the component matches the required thermal resistance values for your specific board material, whether FR-5 or alumina substrate.
Select this component for designs requiring a compact NPN switch with a 40 V collector-emitter breakdown. The SOT-23 form factor suits space-constrained surface mount layouts. Evaluate the 225 mW thermal dissipation limit relative to your operating environment and ensure the 600 mA current capacity meets peak load requirements without exceeding saturation voltage limits.
This component belongs to the general-purpose NPN silicon transistor category. It utilizes a molded plastic SOT-23 case with UL94-V0 rated flame retardant epoxy. The terminals are solder-plated and meet MIL-STD-750 solderability standards. The device is designed for mounting in any position and features a junction-to-ambient thermal resistance of 556 °C/W on FR-5.
Public confirmed substitute part numbers: None.