MMBT4401

$0.10

Description：TRANS NPN 40V 0.6A SOT-23-3L
Series：-

SKU:8de25027f68f Category: Single Bipolar Transistors Brand: ANBON SEMICONDUCTOR (INT'L) LIMITED

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 40V 0.6A SOT-23-3L
Series：-
Mfr：ANBON SEMICONDUCTOR (INT'L) LIMITED
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Current - Collector (Ic) (Max)：600 mA
Voltage - Collector Emitter Breakdown (Max)：40 V
Vce Saturation (Max) @ Ib, Ic：750mV @ 50mA, 500mA
Current - Collector Cutoff (Max)：100nA
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 1V
Power - Max：350 mW
Frequency - Transition：250MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3L
Grade：-
Qualification：-

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MMBT4401

Overview

The MMBT4401 is an NPN silicon epitaxial planar transistor in a SOT-23 package. It supports a maximum collector-emitter voltage of 40 V and a collector-base voltage of 60 V, with an emitter-base voltage rating of 6 V. The device handles a continuous collector current of 600 mA and dissipates up to 225 mW on FR-5 boards or 300 mW on alumina substrates. Operating junction temperatures range from -55 °C to +150 °C. Electrical characteristics include a minimum DC current gain (hFE) of 20 at 150 mA and a transition frequency (fT) of 250 MHz.

Feature Summary

Epitaxial planar chip construction for reliable performance
Designed for medium power applications and switching circuits
Capable of 225 mW power dissipation on standard FR-5 boards

Applications

Medium power application circuits
General purpose switching applications

Procurement Notes

Verify the specific ordering suffix against official documentation, as variants such as the halogen-free MMBT4401-H exist. Confirm RoHS compliance status directly with the manufacturer, as datasheet records may vary by production batch. Ensure the component matches the required thermal resistance values for your specific board material, whether FR-5 or alumina substrate.

Selection Notes

Select this component for designs requiring a compact NPN switch with a 40 V collector-emitter breakdown. The SOT-23 form factor suits space-constrained surface mount layouts. Evaluate the 225 mW thermal dissipation limit relative to your operating environment and ensure the 600 mA current capacity meets peak load requirements without exceeding saturation voltage limits.

Part Context

This component belongs to the general-purpose NPN silicon transistor category. It utilizes a molded plastic SOT-23 case with UL94-V0 rated flame retardant epoxy. The terminals are solder-plated and meet MIL-STD-750 solderability standards. The device is designed for mounting in any position and features a junction-to-ambient thermal resistance of 556 °C/W on FR-5.