BD246B-S

Overview

The BD246B-S is a PNP silicon bipolar junction transistor manufactured by Bourns Inc. It features a collector-emitter voltage rating of -100 V and a continuous collector current capacity of 10 A. The device is housed in a flange mount package with three terminals, designed for high-power applications. It supports a maximum DC current gain (hFE) of 4 and operates within a junction temperature range of -65 °C to +150 °C. The component is rated for 80 W of continuous device dissipation at or below 25°C case temperature.

Feature Summary

• High power handling capability suitable for demanding electronic circuits
• Robust construction with flange mount packaging for efficient thermal management
• Designed for stable operation across a wide temperature range

Applications

• Power amplifier stages
• Switching regulators
• Industrial motor control systems

Procurement Notes

Verify the specific suffix 'S' against official Bourns documentation to confirm if it denotes a specific tape-and-reel variant or packaging difference compared to the standard BD246B. Ensure the datasheet confirms RoHS compliance status, as general BD246A data indicates non-compliance. Cross-reference the pinout configuration to ensure compatibility with existing PCB footprints before procurement.

Selection Notes

Select this component when a PNP transistor with high voltage blocking capability and significant current handling is required. The flange mount style necessitates direct mounting to a heatsink or chassis for optimal thermal performance. Consider the single-ended configuration and unclamped inductive load energy ratings when designing protection circuits for inductive loads.

Part Context

This part belongs to the BD246 series of high-power PNP transistors. These devices are engineered for robustness in industrial and consumer electronics where reliability under high stress conditions is critical. The series typically includes variants like BD246A, BD246B, and BD246C, differentiated primarily by their breakdown voltage ratings while maintaining similar current and power characteristics.

Replacement Considerations

Check for exact electrical parameter matches in alternative PNP transistors from other manufacturers. Verify that substitute components support the same flange mount package dimensions and terminal configurations to avoid mechanical redesign.