BD245A-S

Overview

The BD245A-S is an NPN silicon power transistor manufactured by Bourns Inc. It features a collector-emitter voltage rating of 80 V and a continuous collector current capacity of 10 A. The device is designed for complementary use with the BD246 series PNP transistors. It utilizes a flange mount package (R-PSFM-T3) with three terminals, where the case is connected to the collector. The component supports a maximum operating junction temperature of 150 °C and complies with RoHS standards.

Feature Summary

• Designed for high-power switching applications requiring robust current handling capabilities
• Features a flange mount construction facilitating efficient thermal dissipation through direct chassis mounting
• Engineered for complementary pairing with specific PNP silicon power transistor series

Applications

• High-power audio amplifier output stages
• Industrial motor control circuits
• Power supply regulation systems

Procurement Notes

Verify the specific manufacturer source, as Bourns may distribute components originally designed by other semiconductor manufacturers. Confirm that the 'S' suffix denotes the specific flange mount packaging variant. Ensure the procurement documentation explicitly states compliance with relevant environmental directives such as RoHS. Cross-reference the datasheet revision date to ensure technical specifications match the production batch requirements.

Selection Notes

Select this component when designing circuits requiring an NPN power transistor with an 80 V collector-emitter breakdown voltage and 10 A continuous current capability. The flange mount package is suitable for applications necessitating direct heat sinking to a chassis or large heatsink structure. Consider the complementary BD246 series if a matched PNP counterpart is required for push-pull configurations. Evaluate thermal management strategies based on the specified case temperature dissipation ratings.

Part Context

This component belongs to the family of bipolar junction transistors (BJT) intended for power amplification and switching. It shares functional similarities with other high-current NPN power transistors in the industry but is distinguished by its specific voltage rating and mechanical flange mount form factor. The part is often utilized in designs requiring rugged, high-current discrete semiconductor solutions.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided data. Verify pinout compatibility and thermal resistance characteristics before considering alternative generic NPN power transistors with similar 80V/10A ratings.