BD245B-S

BD245B-S

$0.54
  • Description:TRANS NPN 80V 10A SOT-93
  • Series:-

SKU:453b06d7c31b Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 80V 10A SOT-93
  • Series:-
  • Mfr:Bourns Inc.
  • Package:Tube
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):10:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:4V @ 2.5A, 10A
  • Current - Collector Cutoff (Max):700µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 3A, 4V
  • Power - Max:3 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-218-3
  • Supplier Device Package:SOT-93
  • Grade:-
  • Qualification:-

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BD245B-S

Overview

The BD245B-S is an NPN silicon power transistor manufactured by Bourns Inc. It features a collector-emitter voltage rating of 80 V and a maximum continuous collector current of 10 A. The device utilizes a TO-3PN flange mount package with three terminals, where the collector is electrically connected to the mounting base for efficient heat dissipation. It supports a maximum operating temperature of 150 °C and complies with RoHS standards.

Feature Summary

  • High current handling capability suitable for power switching applications
  • Robust thermal management via direct collector-to-base flange mounting
  • Compliance with environmental regulations including RoHS

Applications

  • Medium power linear amplifier circuits
  • General purpose switching applications
  • Power supply output stages

Procurement Notes

Verify the manufacturer designation on official datasheets, as the BD245B part number is historically associated with SavantIC Semiconductor. Confirm that the specific suffix '-S' corresponds to the Bourns Inc. variant in your supply chain documentation. Ensure the component matches the TO-3PN flange mount physical dimensions and electrical specifications listed in the verified product specification before integration into designs.

Selection Notes

Select this component when designing circuits requiring an NPN power transistor with an 80 V breakdown voltage and 10 A current capacity. The TO-3PN package is appropriate for applications necessitating direct heatsink mounting through the collector terminal. Consider the minimum DC current gain and thermal resistance characteristics relative to the expected load conditions and ambient operating temperatures.

Part Context

This component belongs to the BD245 series of silicon NPN power transistors. The series typically includes complementary PNP devices such as the BD246. These transistors are engineered for robust performance in high-power environments, offering a balance of voltage blocking capability and current drive strength within a standard industrial power package format.

Replacement Considerations

Consult official cross-reference data for exact substitutes. Generic equivalents may vary in thermal resistance or current gain characteristics.

BD245B-SBD245B-S
$0.54
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