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Product Detailed Parameters
- Description：TRANS NPN 80V 1A SOT-223
- Series：-
- Mfr：ANBON SEMICONDUCTOR (INT'L) LIMITED
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：1:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 2V
- Power - Max：1.6 W
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-261-4, TO-261AA
- Supplier Device Package：SOT-223
- Grade：-
- Qualification：-
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Overview
The BCP56-16 is an NPN silicon epitaxial transistor designed for general-purpose applications. It features a collector-emitter breakdown voltage of 80 V and a continuous collector current capability of 1 A. The device supports a total power dissipation of 1.5 W when mounted on an FR-4 PCB. Electrical characteristics include a DC current gain (hFE) ranging from 100 to 250 at a collector current of 150 mA, with a maximum collector-base saturation voltage of 0.5 V under specified test conditions.
Feature Summary
- High collector current capability suitable for medium power switching and amplification tasks
- Low collector-emitter saturation voltage for efficient power management
- Robust thermal performance with defined junction-to-ambient resistance values
- Compliant with halogen-free environmental standards
Applications
- Linear voltage regulators
- MOSFET drivers
- High-side switches
- Power management circuits
- Amplifiers
Procurement Notes
Verify the specific manufacturer source, as this component designation appears across multiple vendors including Anbon Semiconductor, Nexperia, and ON Semiconductor. Confirm that the datasheet specifications match your design requirements, particularly regarding thermal resistance and package dimensions. Ensure compliance with project-specific environmental regulations such as halogen-free or RoHS standards before finalizing procurement.
Selection Notes
Select this component for designs requiring an NPN transistor with 80 V collector-emitter voltage and 1 A current handling in a surface-mount SOT-223 package. Consider the thermal resistance parameters if operating near the maximum power dissipation limit. Verify the required hFE binning for your specific gain needs, as the device offers a range of 100 to 250 depending on the collector current.
Part Context
This part belongs to the family of general-purpose NPN silicon transistors commonly used in audio amplifier stages and power switching applications. It serves as a complement to PNP variants like the BCP53 series. The SOT-223 package provides a balance between power handling and compact surface-mount footprint, making it suitable for industrial and automotive electronics where reliable medium-power switching is required.
Replacement Considerations
Compatible substitutes include the BCP56T from Nexperia and the BCP56-16T1G from ON Semiconductor. These parts share identical electrical ratings and pin configurations within the SOT-223 package family. Verify mechanical dimensions and marking codes when swapping manufacturers to ensure board compatibility.
FAQ
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter breakdown voltage (VCEO) is rated at 80 V.
What is the DC current gain range?
The DC current gain (hFE) ranges from 100 to 250 when measured at a collector current of 150 mA and VCE of 2 V.
Is the device compliant with halogen-free standards?
Yes, the component is compliant with halogen-free requirements.
