BD245C-S

$0.54

Description：TRANS NPN DARL 100V 10A SOT-93
Series：-

SKU:809c3b648803 Category: Single Bipolar Transistors Brand: Bourns Inc.

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Product introduction

Product Detailed Parameters

Description：TRANS NPN DARL 100V 10A SOT-93
Series：-
Mfr：Bourns Inc.
Package：Tube
Transistor Type：NPN - Darlington
Current - Collector (Ic) (Max)：10:00 AM
Voltage - Collector Emitter Breakdown (Max)：100 V
Vce Saturation (Max) @ Ib, Ic：4V @ 2.5A, 10A
Current - Collector Cutoff (Max)：700µA
DC Current Gain (hFE) (Min) @ Ic, Vce：4 @ 10A, 4V
Power - Max：3 W
Frequency - Transition：-
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-218-3
Supplier Device Package：SOT-93
Grade：-
Qualification：-

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BD245C-S

Overview

The BD245C-S is an NPN silicon power transistor manufactured by Bourns Inc. It features a maximum collector-emitter voltage of 80 V and a continuous collector current rating of 10 A. The device is designed for complementary use with the BD246 series and offers a peak collector current capability of 15 A. It operates at a case temperature of 25°C with a power dissipation rating of 80 W. The component utilizes a flange mount package configuration suitable for high-power applications.

Feature Summary

NPN silicon construction optimized for power switching
Complementary design pairing with BD246 series
High current handling with 10 A continuous rating
Flange mount packaging for thermal management

Applications

Power amplifier circuits
Switching regulators
Motor control systems

Procurement Notes

Verify the specific suffix 'C' against official Bourns documentation to confirm if it denotes a distinct electrical bin or mechanical variant compared to the standard BD245. Confirm RoHS compliance status as datasheets may vary by production batch. Ensure the flange mount package dimensions match the target PCB layout requirements before ordering.

Selection Notes

Select this component when an NPN power transistor with 80 V breakdown and 10 A continuous current is required. Consider the complementary BD246 for push-pull configurations. Evaluate thermal resistance and heatsinking needs based on the 80 W dissipation rating at 25°C case temperature. Verify package compatibility for flange mounting.

Part Context

The BD245C-S belongs to the BD245 family of NPN silicon power transistors produced by Bourns. These devices are engineered for general-purpose power amplification and switching tasks. The series is characterized by high current gain and robust secondary breakdown performance, making them suitable for demanding electronic designs requiring reliable power handling.