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The Bourns TIP33C-S is an NPN Darlington bipolar junction transistor designed for high-power switching applications. It features a maximum collector current of 10 A and a collector-emitter voltage rating of 100 V. The device is housed in a TO-218-3 (SOT-93) through-hole package, suitable for robust mounting requirements. It operates within a junction temperature range of -65°C to 150°C and supports a maximum power dissipation of 3.5 W. Thermal derating is specified at 0.64 W/°C above 25°C case temperature.
Verify the specific suffix 'S' against the manufacturer's official datasheet to confirm package type and compliance status. Ensure the component matches the required TO-218-3 footprint and electrical ratings for the target design. Cross-reference the manufacturer part number with authorized distributor catalogs to confirm authenticity and availability.
Select this component when high current switching and high voltage isolation are required in a through-hole format. Consider the Darlington structure's inherent saturation voltage and switching speed limitations compared to standard BJTs. Evaluate thermal management strategies given the 3.5 W power dissipation limit and linear derating requirements.
The TIP33C-S belongs to the TIP33 series of NPN Darlington transistors manufactured by Bourns Inc. This series serves as a complement to other variants such as the TIP34 series. These devices are categorized under discrete semiconductor products, specifically single bipolar junction transistors intended for industrial and consumer electronics applications.
Consult official Bourns documentation for direct cross-references. Generic equivalents may vary in hFE characteristics and thermal resistance. Verify pinout compatibility and voltage/current ratings before substitution.