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The TIP2955-S is a PNP silicon power transistor manufactured using epitaxial-base planar technology. It features a collector-emitter voltage (VCEO) of -70 V and a continuous collector current (IC) of -15 A. The device supports up to 90 W of power dissipation at a 25°C case temperature, with a junction-to-case thermal resistance of 1.39 °C/W. Electrical characteristics include a DC current gain (hFE) ranging from 5 to 70 at IC = -10 A, and a collector-emitter saturation voltage (VCE(sat)) of -3 V max at IC = -10 A. Operating junction temperatures range from -65°C to +150°C.
Verify component authenticity through authorized channels as the datasheet indicates this part may be obsolete. Confirm specific ordering suffixes directly with the manufacturer or distributor, as suffixes can alter package type or electrical selection criteria. Ensure compliance with RoHS standards if required by the application environment. Check current availability status before finalizing design specifications.
Select this component for high-current PNP switching or linear regulation tasks requiring compatibility with the TIP3055 series. Evaluate thermal management requirements carefully, as power dissipation derates significantly above 25°C case temperature. Consider the maximum safe operating area curves for inductive load switching scenarios to ensure reliable operation within specified voltage and current limits.
The TIP2955 belongs to a family of complementary silicon power transistors intended for general-purpose power control. It serves as the PNP counterpart to the TIP3055 NPN transistor, facilitating push-pull amplifier configurations. Manufactured via epitaxial-base planar processes, these devices are engineered for robust performance in demanding power electronics environments.
Direct substitutes include the TIP2955G or other generic PNP power transistors matching the -70V/-15A/90W specifications. Verify pinout compatibility and thermal resistance values when cross-referencing with alternative manufacturers' components.