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The BD246A-S is a PNP silicon bipolar junction transistor (BJT) manufactured by Bourns. It features a maximum collector-emitter voltage of -60 V and a continuous collector current rating of -10 A. The device supports a peak collector current of -15 A and offers a minimum DC current gain (hFE) of 4. It is housed in a flange mount package with three terminals, where the case is connected to the collector. The component operates within a junction temperature range of -65 °C to +150 °C and has a maximum power dissipation of 80 W at 25 °C case temperature.
Verify the specific suffix 'S' against official Bourns documentation to confirm if it denotes a specific tape-and-reel packaging variant or a minor electrical tolerance difference compared to the standard BD246A. Ensure the datasheet confirms RoHS compliance status, as general listings may indicate non-compliance while specific suffixes might differ. Cross-reference the manufacturer's latest revision history to validate pinout and thermal resistance parameters before finalizing procurement specifications.
Select this component when a PNP transistor with a 60 V collector-emitter breakdown and 10 A continuous current capability is required. The flange mount package is suitable for applications necessitating efficient thermal management through direct mounting to a chassis or heatsink. Consider the low minimum hFE of 4 when designing base drive circuits to ensure adequate saturation under worst-case conditions.
The BD246A belongs to a series of high-power PNP transistors designed for robust performance in demanding environments. Variants such as the BD246B and BD246C typically offer higher voltage ratings within the same physical package family. These devices are commonly used in linear and switching power applications where high current handling and thermal stability are critical requirements.
Publicly confirmed substitute part numbers for the BD246A-S are not available in the provided source material.