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The MMBT4403 is a 600mA Silicon PNP Epitaxial Planar Transistor manufactured by ANBON SEMICONDUCTOR (INT'L) LIMITED. It operates with a maximum collector-base voltage of -40V, a collector-emitter voltage of -40V, and an emitter-base voltage of -5.0V. The device supports a continuous collector current of -600mA and dissipates up to 225mW on an FR-5 board or 300mW on an alumina substrate. It functions within a storage temperature range of -55°C to +150°C and an operating junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix against the manufacturer's documentation before procurement. Confirm that the component matches the required lead-free specifications if environmental compliance is mandatory. Ensure the package type aligns with the intended surface mount assembly process. Cross-reference the datasheet revision date to confirm the accuracy of the electrical parameters provided.
Select this component for designs requiring a general-purpose PNP transistor in a compact SOT-23 footprint. Consider the complementary NPN type for paired circuit requirements. Evaluate thermal management needs based on the specified dissipation limits on standard FR-5 substrates. Verify that the saturation voltages meet the efficiency requirements of the target switching application.
This component belongs to the family of small-signal bipolar junction transistors designed for low-power electronic systems. It utilizes silicon technology to provide stable amplification and switching capabilities. The epitaxial planar structure ensures consistent performance across varying operational temperatures and load conditions.
The datasheet recommends the NPN transistor MMBT4401 as the complementary type. No other direct substitute part numbers are documented in the provided source material.
The marking code for the MMBT4403 is '2T'.
The suffix '-H' indicates a halogen-free version of the part, such as MMBT4403-H.
Pin 1 is the Base, Pin 2 is the Collector, and Pin 3 is the Emitter.