MMBT5551

$0.10

Description：TRANS NPN 160V 0.6A SOT-23-3L
Series：-

SKU:a8c1ad06a1fa Category: Single Bipolar Transistors Brand: ANBON SEMICONDUCTOR (INT'L) LIMITED

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 160V 0.6A SOT-23-3L
Series：-
Mfr：ANBON SEMICONDUCTOR (INT'L) LIMITED
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Current - Collector (Ic) (Max)：600 mA
Voltage - Collector Emitter Breakdown (Max)：160 V
Vce Saturation (Max) @ Ib, Ic：200mV @ 5mA, 50mA
Current - Collector Cutoff (Max)：50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
Power - Max：300 mW
Frequency - Transition：100MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3L
Grade：-
Qualification：-

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MMBT5551

Overview

The MMBT5551 is an NPN silicon high-voltage transistor manufactured by Anbon Semiconductor. It utilizes epitaxial planar die construction and is housed in a SOT-23 molded plastic case. The device features a collector-emitter breakdown voltage of 160 V at 1 mA, with a continuous collector current rating of 600 mA. Maximum collector power dissipation is 300 mW, and the thermal resistance from junction to ambient is 416 °C/W. The component supports an operating junction temperature range of -55°C to +150°C.

Feature Summary

Epitaxial planar die construction for robust performance
High voltage capability suitable for demanding applications
Lead-free composition compliant with MIL-STD-19500/228 standards

Applications

General purpose high voltage amplifiers
Gas discharge display driving circuits

Procurement Notes

Verify that the specific part number matches the required voltage class, as the datasheet indicates a minimum collector-emitter breakdown voltage of 140V for the series, with the MMBT5551 variant specifically rated at 160V. Confirm the package type is SOT-23 and check for the Halogen-free suffix if environmental compliance is mandatory. Ensure the supplier provides documentation confirming lead-free status per MIL-STD-19500/228.

Selection Notes

Select this component when a general-purpose NPN transistor requires a collector-emitter voltage of up to 160V. It is appropriate for medium power switching and amplification tasks where low current operation is sufficient. Consider the complementary PNP type if a push-pull configuration is needed. Verify that the SOT-23 package dimensions fit the PCB layout constraints.

Part Context

This component belongs to the MMBT555x series of high-voltage transistors produced by Anbon Semiconductor. The series includes the MMBT5550 and MMBT5551 variants, which differ primarily in their collector-emitter breakdown voltage ratings. Both share similar mechanical data and construction methods, designed for surface mount applications requiring reliable high-voltage performance in compact form factors.