MMBT5401

Overview

The MMBT5401 is a high-voltage PNP silicon transistor manufactured by ON Semiconductor. It features a collector-emitter breakdown voltage of -150 V and a maximum continuous collector current of -500 mA. The device operates with a transition frequency of 300 MHz and dissipates up to 225 mW of power. It is housed in an SOT-23-3 surface-mount package and supports an operating temperature range from -55 °C to +150 °C.

Feature Summary

• High voltage capability for demanding switching applications
• Fast switching performance suitable for high-frequency circuits
• Compact surface-mount packaging for automated assembly

Applications

• General-purpose high-voltage switching
• Driver circuits for relays and solenoids
• Inverter stages in power supplies

Procurement Notes

Verify the manufacturer origin carefully, as the requested brand differs from the official datasheet source. Confirm that the specific part number matches the electrical specifications and package type required for your design. Ensure compliance with RoHS and halogen-free requirements if applicable to your project standards.

Selection Notes

Select this component when a PNP transistor with high voltage tolerance and moderate current capacity is required in a small footprint. Consider the thermal dissipation limits and ensure adequate heat sinking or PCB copper area management for sustained operation near maximum ratings.

Part Context

This component belongs to the MMBT series of high-voltage bipolar junction transistors. It is commonly used in consumer electronics and industrial control systems where space constraints necessitate surface-mount technology while maintaining robust voltage handling capabilities.

Replacement Considerations

Equivalent parts include MMBT5401LT1G from ON Semiconductor. Verify pinout compatibility and electrical parameters before substitution.