2N2608UB/TR

Overview

The 2N2608UB/TR is a P-channel Silicon Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It is housed in a TO-18 metal can package with three pins and utilizes through-hole mounting. The device operates in depletion mode with a gate-source breakdown voltage of 30 V. The drain-source cutoff voltage ranges from 750 mV to 6 V, while the drain-source current at zero gate-source voltage spans from -1 mA to -5 mA. Maximum power dissipation is rated at 300 mW, supporting an operating temperature range from -65°C to +200°C.

Feature Summary

• P-channel JFET technology for small-signal applications
• Metal can TO-18 package construction
• High maximum operating temperature capability

Applications

• General purpose small signal amplification
• Low noise analog circuits
• High temperature electronic systems

Procurement Notes

Verify the specific suffix UB/TR against official Microchip documentation to confirm tape-and-reel packaging and exact electrical binning. Ensure the procurement channel sources directly from authorized distributors or the manufacturer to guarantee component authenticity and traceability. Cross-reference the datasheet revision date with the production lot code to validate technical specifications.

Selection Notes

Select this component when a P-channel JFET with high thermal tolerance is required. The TO-18 package suits designs needing robust mechanical stability. Verify that the required gate-source cutoff voltage falls within the specified 750 mV to 6 V range. Confirm that the circuit's power dissipation requirements remain below the 300 mW limit under all operating conditions.

Part Context

This part belongs to the 2N2608 family of P-channel JFETs. The standard 2N2608 variant typically uses bulk packaging, whereas the UB/TR suffix indicates a specific reel configuration. Both variants share identical core semiconductor characteristics and pinout definitions as defined in the official Microchip datasheet.

Replacement Considerations

Direct replacements must match the P-channel JFET type, TO-18 package, and electrical parameters. Verify compatibility with existing board space and thermal management requirements before substitution.