2N2857

Bipolar RF Transistors Overview

The Microsemi 2N2857 is a silicon NPN RF small-signal bipolar transistor designed for ultra-high frequency applications. It features a maximum collector-emitter voltage (VCEO) of 15 V and an emitter-base voltage (VEBO) of 3 V. The device supports a continuous collector current of 40 mA with a minimum DC current gain (hFE) of 30. Power dissipation is rated at 200 mW, and it operates within a temperature range of -65 °C to +200 °C. The component is housed in a hermetically sealed UB-3 package suitable for surface mount or specific leaded configurations.

Bipolar RF Transistors Feature Summary

• Hermetically sealed construction for environmental protection
• Ultra-high frequency band operation capability
• High thermal stability up to 200 °C

Bipolar RF Transistors Applications

• RF amplifier circuits
• Military communication systems
• Aerospace signal processing

Bipolar RF Transistors Procurement Notes

Verify the specific qualification level suffix (e.g., JANTXV) as standard part numbers often denote the base die. Confirm package type availability, as UB-3 may refer to ceramic SMT or TO-18 equivalents depending on the manufacturer's specific drawing. Ensure compliance with MIL-PRF-19500 requirements if military screening is mandated for the project.

Bipolar RF Transistors Selection Notes

Select this component when high-frequency performance and radiation hardness are required. Compare hFE ranges against circuit biasing needs. Verify that the 200 mW power dissipation rating aligns with thermal management capabilities in the final assembly. Check for alternative packages if board space constraints differ from the UB-3 footprint.

Bipolar RF Transistors Part Context

This transistor belongs to the 2N2857 family, which includes various qualification levels such as JAN, JANTX, and JANTXV. These variants share identical electrical characteristics but differ in manufacturing screening and reliability testing standards defined by MIL-PRF-19500. The base model represents the core semiconductor specification used across these military-grade classifications.

Bipolar RF Transistors Replacement Considerations

Direct substitutes include Semicoa's 2N2857UB series and other manufacturers offering MIL-PRF-19500 qualified NPN RF transistors. Ensure replacement parts match the 15 V VCEO and 40 mA IC limits. Verify pinout compatibility for the specific package variant being replaced.