2N2907A

Single Bipolar Transistors Overview

The STMicroelectronics 2N2907A is a silicon planar epitaxial PNP small signal transistor housed in a JEDEC TO-18 metal case. Designed for high-speed saturated switching and general-purpose applications, it features a maximum collector current of -0.6 A and peak current of -0.8 A. The device supports a collector-emitter voltage (VCEO) and collector-base voltage (VCBO) of -60 V, with an emitter-base voltage (VEBO) of -5 V. Total power dissipation reaches 1.8 W at a case temperature of 25 °C. It operates within a junction temperature range up to 175 °C.

Single Bipolar Transistors Feature Summary

• High-speed saturated switching capability
• JEDEC TO-18 hermetically sealed metal package
• Silicon planar epitaxial construction

Single Bipolar Transistors Applications

• General purpose switching circuits
• High speed saturated switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer source when sourcing this component, as the 2N2907A designation is utilized by multiple semiconductor producers. Confirm that the received unit matches the STMicroelectronics datasheet specifications regarding electrical characteristics and mechanical dimensions. Ensure the TO-18 package variant is selected correctly, distinct from the TO-39 variant used for the 2N2905A.

Single Bipolar Transistors Selection Notes

Select the 2N2907A over the 2N2905A when a JEDEC TO-18 metal package is required rather than the TO-39 configuration. Both devices share identical electrical ratings and switching performance profiles. Consider the thermal resistance values provided in the datasheet for heat dissipation planning in your circuit design.

Single Bipolar Transistors Part Context

This component belongs to the family of small signal PNP transistors designed for robust switching operations. It complements the NPN counterpart in the same series, offering matched electrical characteristics for complementary push-pull configurations. The TO-18 metal casing provides environmental protection suitable for demanding industrial environments.

Single Bipolar Transistors Replacement Considerations

Cross-reference with other manufacturers' 2N2907A equivalents to ensure pinout compatibility and electrical parameter alignment. Verify that substitute components meet the same JEDEC TO-18 mechanical outline requirements.

Single Bipolar Transistors FAQ

What is the maximum total power dissipation for the 2N2907A?

The maximum total power dissipation is 1.8 W when the case temperature is maintained at or below 25 °C.

How does the transition frequency compare to other parameters?

The transition frequency (fT) is specified at 200 MHz under conditions of -20 V collector-emitter voltage and -50 mA collector current.