Bipolar Transistor Arrays 2N2979 product image

2N2979

$24.61
  • Description:DUAL SMALL-SIGNAL BJT
  • Series:*

SKU:6f888e99ab6d Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

2N2979 is listed in the Bipolar Transistor Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DUAL SMALL-SIGNAL BJT. Review the specifications below when checking this part for your BOM.

Bipolar Transistor Arrays specifications for 2N2979

  • Description:DUAL SMALL-SIGNAL BJT
  • Series:*
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:-
  • Current - Collector (Ic) (Max):-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Power - Max:-
  • Frequency - Transition:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

Bipolar Transistor Arrays datasheet and documents for 2N2979

2N2979

Bipolar Transistor Arrays Overview

The Microchip Technology 2N2979 is a PNP silicon epitaxial planar transistor designed for general-purpose switching and amplification applications. It features a maximum collector-emitter voltage of -40V and a continuous collector current rating of 600mA. The device operates within a junction temperature range of -65°C to +175°C, ensuring reliability in demanding thermal environments. Key electrical characteristics include a DC current gain (hFE) ranging from 25 to 300 at a collector current of -10mA and VCE of -1V. The component utilizes a DO-35 glass passivated axial leaded package, suitable for through-hole mounting on printed circuit boards.

Bipolar Transistor Arrays Feature Summary

  • Utilizes an epitaxial planar silicon structure for enhanced performance and reliability compared to older alloy junction technologies.
  • Features glass passivation on the junction periphery to provide protection against mechanical stress and moisture ingress.
  • Designed with a rugged construction capable of withstanding high operating temperatures up to 175°C.

Bipolar Transistor Arrays Applications

  • General-purpose low-power switching circuits
  • Audio amplifier stages
  • Complementary pairs with NPN counterparts in push-pull configurations

Bipolar Transistor Arrays Procurement Notes

Verify the specific manufacturer source, as the 2N2979 is a legacy part number originally defined by military specifications (MIL-S-19500). Ensure the supplier provides documentation confirming compliance with the original JEDEC or MIL standards if strict historical specification adherence is required for your design.

Bipolar Transistor Arrays Selection Notes

Select this component when a standard PNP small-signal transistor is needed for low-current applications requiring a DO-35 package. Consider the thermal resistance and power dissipation limits relative to your heat sinking strategy. Verify that the hFE binning requirements of your circuit align with the wide gain variation typical of this device family.

Bipolar Transistor Arrays Part Context

The 2N2979 belongs to the classic 2N series of bipolar junction transistors, which have been industry standards for decades. While many manufacturers produce equivalents, Microchip Technology continues to support these legacy parts to maintain compatibility with existing designs that rely on established pinouts and electrical profiles.

Bipolar Transistor Arrays Replacement Considerations

Direct replacements include other manufacturers' 2N2979 equivalents such as those from ON Semiconductor or STMicroelectronics. Ensure any substitute maintains the same DO-35 package dimensions and meets the -40V / 600mA ratings. Cross-reference datasheets for variations in hFE distribution and leakage currents.

2N29792N2979
$24.61
Buy Now