2N3702

Description：TRANS PNP 25V 0.5A TO-92-3
Series：-

SKU:9dc03e170256 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

2N3702 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 25V 0.5A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N3702

Description：TRANS PNP 25V 0.5A TO-92-3
Series：-
Mfr：onsemi
Package：Bulk
Transistor Type：PNP
Current - Collector (Ic) (Max)：500 mA
Voltage - Collector Emitter Breakdown (Max)：25 V
Vce Saturation (Max) @ Ib, Ic：250mV @ 5mA, 50mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 50mA, 5V
Power - Max：625 mW
Frequency - Transition：100MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2N3702

2N3702

Single Bipolar Transistors Overview

The onsemi 2N3702 is a PNP epitaxial silicon transistor designed for general-purpose amplifier and switching applications requiring collector currents up to 300mA. It features a maximum collector-emitter voltage of -25V, a continuous collector current rating of -500mA, and a total device dissipation of 625mW at 25°C ambient temperature. The component operates within a junction temperature range of -55°C to +150°C and utilizes a TO-92 package with kinked leads.

Single Bipolar Transistors Feature Summary

Designed for use as a general-purpose amplifier and switch
Utilizes PNP epitaxial silicon construction
Suitable for applications requiring collector currents up to 300mA

Single Bipolar Transistors Applications

General-purpose amplification circuits
Electronic switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer origin, as the datasheet indicates Fairchild Semiconductor Corporation while the brand is listed as onsemi. Confirm that the TO-92 package configuration matches the required circuit layout. Ensure compliance with absolute maximum ratings regarding thermal resistance and junction temperature limits during operation.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a -25V collector-emitter breakdown voltage is required. Consider the 625mW power dissipation limit and the TO-92 through-hole package form factor. Verify that the DC current gain range meets the specific circuit requirements for the intended application.

Single Bipolar Transistors Part Context

This component belongs to the category of bipolar junction transistors (BJTs). It is specifically classified as a single PNP transistor housed in a standard TO-92 plastic epoxy case. The device is manufactured using silicon planar technology optimized for low-power general-purpose electronic functions.

Single Bipolar Transistors Replacement Considerations

Consult the datasheet for characteristics of the PN200 transistor. Verify compatibility with other PNP transistors from the same manufacturing family before substitution.