2N3727

Bipolar Transistor Arrays Overview

The Central Semiconductor Corp 2N3727 is a small-signal NPN silicon transistor housed in the TO-78 metal can package. It is designed for general-purpose amplification and switching applications. The device features a collector-emitter breakdown voltage of 40V, a collector current rating of 150mA, and a maximum power dissipation of 625mW at 25°C ambient temperature. It exhibits a DC current gain (hFE) ranging from 70 to 350 under specified test conditions. The component operates within a junction temperature range of -65°C to +200°C and is suitable for use in circuits requiring low noise and high reliability.

Bipolar Transistor Arrays Feature Summary

• Utilizes a hermetically sealed TO-78 metal can package for environmental protection
• Provides high DC current gain suitable for linear amplification stages
• Capable of operating at elevated junction temperatures up to 200°C

Bipolar Transistor Arrays Applications

• General-purpose signal amplification
• Low-noise audio pre-amplifiers
• High-frequency switching circuits

Bipolar Transistor Arrays Procurement Notes

Verify End-of-Life status before procurement as the manufacturer has discontinued production of devices in the TO-78 package. Confirm availability through authorized distributors or surplus channels. Request specific manufacturing date codes and lot traceability if required for legacy system maintenance. Ensure compatibility with existing board layouts utilizing the TO-78 footprint.

Bipolar Transistor Arrays Selection Notes

Select this component when a hermetically sealed metal package is required for harsh environments. Compare hFE ranges against circuit requirements to ensure sufficient gain. Verify thermal management capabilities given the 625mW dissipation limit. Consider alternative packages if TO-78 sourcing is restricted due to discontinuation status.

Bipolar Transistor Arrays Part Context

The 2N3727 belongs to a family of small-signal NPN transistors manufactured by Central Semiconductor Corp. It shares similar electrical characteristics with other general-purpose NPN devices but is distinguished by its TO-78 metal can construction. This packaging style offers superior thermal conductivity and radiation hardness compared to plastic equivalents, making it suitable for specialized industrial or military-grade applications.

Bipolar Transistor Arrays Replacement Considerations

No direct replacement part numbers are listed in the official discontinuation notice. Contact [email protected] for assistance in locating alternate sources. Evaluate generic NPN transistors with comparable Vceo, Ic, and package dimensions for potential substitution.