2N3778

Single Bipolar Transistors Overview

The Microchip Technology 2N3778 is a PNP bipolar junction transistor designed for power applications. It features a maximum power dissipation of 5 W and a collector current rating of 1 A. The device provides a collector-to-base breakdown voltage of 40 V and a collector-to-emitter breakdown voltage of 40 V, with an emitter-to-base breakdown voltage of 8 V. Packaged in a TO-5 (STD) metal can, it exhibits a typical DC current gain ranging from 10 to 40 at 200 mA. At specific test conditions, the collector-emitter saturation voltage is typically 0.2 V.

Single Bipolar Transistors Feature Summary

• Utilizes a hermetically sealed TO-5 metal can package suitable for through-hole mounting
• Engineered for high-power dissipation up to 5 W
• Provides robust collector-to-emitter and collector-to-base breakdown voltages of 40 V

Single Bipolar Transistors Applications

• High-power switching circuits
• RF amplifier stages
• Military-grade electronic systems

Single Bipolar Transistors Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number 2N3778 with official Microchip Technology documentation. Confirm that the physical package matches the specified TO-5 (STD) form factor. Ensure compliance with required electrical ratings, specifically the 40 V breakdown voltage and 5 W power dissipation limits, before integration into final designs.

Single Bipolar Transistors Selection Notes

Select this component when a ruggedized PNP transistor with a metal case is required for high-voltage or high-current environments. The TO-5 package offers superior thermal performance compared to plastic alternatives. Verify that the 40 V breakdown voltage aligns with circuit requirements and that the packaging style fits the available board space.

Single Bipolar Transistors Part Context

This component belongs to the family of discrete bipolar junction transistors manufactured by Microchip Technology. It serves as a specialized semiconductor switch and amplifier element within larger electronic assemblies. The device is distinct from integrated circuits, functioning as a fundamental building block for analog and power control applications.

Single Bipolar Transistors Replacement Considerations

Consult official Microchip Technology substitution guides for verified equivalent part numbers. Do not assume compatibility based solely on generic specifications without confirming pinout and electrical parameter alignment.