2N3810L

Bipolar Transistor Arrays Overview

The Microchip Technology 2N3810L is a silicon PNP dual small-signal bipolar junction transistor (BJT) housed in a TO-78-6 hermetically sealed metal can package. Designed for through-hole mounting, it supports a maximum DC collector current of 50 mA and withstands collector-emitter and collector-base voltages of 60 V each, with an emitter-base voltage rating of 5 V. The device dissipates up to 350 mW of power and operates within a temperature range of -65°C to +200°C. It features a minimum DC current gain (hFE) of 100 at 10 µA and 5 V, with a maximum gain of 450 at 100 µA and 5 V.

Bipolar Transistor Arrays Feature Summary

• Hermetically sealed TO-78 metal can construction ensures environmental protection and reliability.
• Dual PNP configuration provides matched transistor pairs within a single component.
• Extended high-temperature operation capability up to +200°C suitable for demanding environments.

Bipolar Transistor Arrays Applications

• General-purpose switching and amplification circuits
• Matched dual transistor applications requiring consistent performance
• Military and aerospace systems requiring radiation-hardened or screened components

Bipolar Transistor Arrays Procurement Notes

Verify the specific screening level required for your application, as the 2N3810L designation may correspond to various MIL-PRF-19500 grades such as JAN, JANTX, or JANS. Confirm that the TO-78-6 package pinout matches your PCB layout. Ensure compliance with RoHS exemptions if applicable, as military-grade variants often carry non-RoHS status. Validate lead times due to potential long production cycles associated with specialized semiconductor manufacturing.

Bipolar Transistor Arrays Selection Notes

Select this component when a hermetically sealed dual PNP BJT is necessary for high-reliability designs. Compare the 50 mA current limit and 60 V voltage ratings against circuit requirements to ensure adequate headroom. Consider the thermal resistance and 350 mW power dissipation limits under expected operating conditions. Verify that the extended temperature range meets the environmental specifications of the target system.

Bipolar Transistor Arrays Part Context

The 2N3810L belongs to the broader 2N3810 series of dual PNP transistors manufactured by Microchip Technology. This series includes various screening levels and packaging options, such as the standard 2N3810 and the Jan2N3810L variant. The L suffix typically denotes specific military or space-grade processing standards. These devices are commonly used in legacy and modern high-reliability electronics where robustness and stability are critical.

Bipolar Transistor Arrays Replacement Considerations

Direct substitutes include other manufacturers' versions of the 2N3810L or equivalent MIL-PRF-19500 qualified parts. Verify pin compatibility and electrical parameters before substitution. Alternative packages like TO-77 may require adapter considerations. Cross-reference with JANS2N3810L or similar screened variants for identical form-fit-function requirements.