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The onsemi 2N3820 is a P-channel general-purpose JFET designed for low-level audio and high-impedance signal source applications. It features a Drain-Gate Voltage of -20 V and a Gate-Source Voltage of 20 V, with a maximum total device dissipation of 350 mW at 25°C. The zero-gate voltage drain current ranges from -0.3 to -15 mA at -10 V. Small-signal characteristics include an input capacitance of 32 pF and a reverse transfer capacitance of 16 pF at 1.0 kHz. The device operates within a junction temperature range up to 150°C and utilizes a TO-92 package.
Verify the specific manufacturer origin, as the component was originally produced by Fairchild Semiconductor and may now be distributed under onsemi branding. Confirm the package type matches the required TO-92 footprint and pinout configuration (Drain, Gate, Source) before integration into the design. Ensure compliance with RoHS standards if applicable to the final assembly requirements.
Select this component when a P-channel JFET is required for low-noise, high-impedance input stages. The 350 mW power dissipation rating limits its use to small-signal applications rather than power switching. Consider the thermal resistance values if operating in enclosed environments without adequate heat sinking or airflow.
The 2N3820 belongs to the family of P-channel Junction Field-Effect Transistors commonly used in analog signal processing. Originally manufactured by Fairchild Semiconductor, it serves as a standard discrete semiconductor solution for pre-amplification tasks where high input impedance and low distortion are critical performance factors.
Check for direct cross-reference equivalents such as the 2N5485 or similar P-channel JFETs with matching voltage ratings and TO-92 packaging. Verify that substitute devices meet the same electrical specifications for gate-source breakdown voltage and drain current to ensure circuit compatibility.