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Product Detailed Parameters
- Description：8V 10MA 360MW TH JFET N CHANNEL
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：25 V
- Drain to Source Voltage (Vdss)：25 V
- Current - Drain (Idss) @ Vds (Vgs=0)：2 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：8 V @ 2 nA
- Input Capacitance (Ciss) (Max) @ Vds：8pF @ 15V
- Resistance - RDS(On)：-
- Power - Max：360 mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The 2N3819 TRE PBFREE is an N-channel junction field-effect transistor (JFET) manufactured by Central Semiconductor Corp. It features a TO-92-3 through-hole package and operates with a maximum drain-source voltage of 25 V and a continuous drain current of 100 mA. The device exhibits a typical forward transconductance of 3000 µS at a drain current of 10 mA. Key electrical limits include a gate-source cutoff voltage of -4 V and a zero-gate-voltage drain current range from 1 to 5 mA. The component supports a power dissipation of 360 mW and functions within a temperature range of -65°C to +200°C.
Feature Summary
- Provides high input impedance characteristics suitable for low-noise signal amplification
- Designed for linear operation in analog switching and buffering applications
- Constructed with silicon technology for stable performance across wide thermal ranges
Applications
- Low-noise preamplifier stages in audio equipment
- High-impedance buffer circuits for sensor interfaces
- Analog switching and voltage-controlled resistor configurations
Procurement Notes
Verify the specific ordering suffix against the manufacturer's latest documentation to confirm lead-free compliance and packaging type. Ensure that the requested quantity aligns with the manufacturer's standard factory pack sizes to avoid partial reel issues. Cross-reference the part number with authorized distributors to confirm current availability status and authenticity before finalizing procurement orders.
Selection Notes
Select this component when a JFET with moderate gain and low noise is required for discrete amplifier designs. Compare the specified drain current and breakdown voltage limits against the target circuit requirements to ensure adequate headroom. Consider the TO-92 package constraints for thermal management if operating near maximum power dissipation limits in enclosed environments.
Part Context
This part belongs to the standard 2N3819 family of N-channel JFETs, widely recognized for use in general-purpose analog circuits. Central Semiconductor produces this variant to meet specific military or industrial reliability standards often associated with the 2N designation. It serves as a direct replacement for legacy designs utilizing equivalent industry-standard JFET specifications.
Replacement Considerations
- 2N3819
- J310
- BSX85
FAQ
What is the maximum gate-source cutoff voltage for this device?
The maximum gate-source cutoff voltage (V_GS(off)) is specified as -4 V.
Does this component support surface mount installation?
No, the 2N3819 TRE PBFREE is designed for through-hole mounting in a TO-92-3 package.
What is the typical forward transconductance value?
The typical forward transconductance (g_fs) is 3000 µS when measured at a drain current of 10 mA.
