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The onsemi 2N3820_D26Z is a P-channel epitaxial silicon JFET in a TO-92 package. It features a drain-gate voltage of -20 V and a gate-source voltage of 20 V. The device has a total power dissipation of 350 mW at 25°C, derating by 2.8 mW/°C above that temperature. Electrical characteristics include a gate-source breakdown voltage of 20 V at 10 µA, a zero-gate voltage drain current ranging from -0.3 to -15 mA at -10 V, and a forward transfer conductance between 800 and 5000 µmhos. Input capacitance is 32 pF and reverse transfer capacitance is 16 pF.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm pinout orientation and packaging details. Ensure the component meets the required thermal resistance specifications for the intended operating environment. Cross-reference the datasheet revision date to confirm the electrical parameters align with current production standards.
Select this component for circuits requiring a P-channel JFET with moderate voltage ratings and low noise characteristics. Consider the thermal resistance values when designing heat dissipation strategies for enclosed environments. Verify that the maximum junction temperature limits are not exceeded during peak operation conditions.
This component belongs to the family of small-signal junction field-effect transistors manufactured by onsemi (formerly Fairchild Semiconductor). It serves as a discrete semiconductor solution for analog signal conditioning tasks where high input impedance is critical. The TO-92 package provides a standard through-hole mounting option for prototyping and consumer electronics.
Public confirmed substitute part numbers: 2N3820/D11Z.