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Product Detailed Parameters
- Description：JFET N-CH 50V TO72
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：50 V
- Drain to Source Voltage (Vdss)：50 V
- Current - Drain (Idss) @ Vds (Vgs=0)：2.5 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：4 V @ 0.5 nA
- Input Capacitance (Ciss) (Max) @ Vds：6pF @ 15V
- Resistance - RDS(On)：-
- Power - Max：300 mW
- Operating Temperature：-55°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-206AF, TO-72-4 Metal Can
- Supplier Device Package：TO-72
- Grade：Military
- Qualification：MIL-PRF-19500/375
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Overview
The Microchip Technology 2N3821 is an N-channel J-FET depletion mode device qualified per MIL-PRF-19500/375. It operates within a junction and storage temperature range of -55 to +200°C. Maximum ratings include a gate-source voltage of 50 V, drain-source voltage of 50 V, and power dissipation of 300 mW at +25°C. Electrical characteristics specify a gate-source breakdown voltage minimum of 50 V, zero-gate-voltage drain current ranging from 0.5 to 4.0 mA, and gate-source cutoff voltage between 4.0 and 6.0 V. Small-signal admittance ranges from 1500 to 3000 µS at 1.0 kHz.
Feature Summary
- Qualified for military standards under MIL-PRF-19500/375 specifications
- Designed for high-temperature operation up to +200°C
- Utilizes TO-72 package construction
Applications
- High-reliability analog signal processing circuits
- Low-noise amplifier stages in aerospace systems
- Precision instrumentation requiring stable depletion mode operation
Procurement Notes
Verify the specific ordering suffix against the manufacturer's datasheet to confirm the exact qualification level (e.g., JAN, JANTX, JANTXV). Ensure the component meets the required environmental testing standards for the intended deployment environment before finalizing procurement orders.
Selection Notes
Select this component when a high-voltage N-channel J-FET with strict military reliability requirements is necessary. Compare the zero-gate-voltage drain current and cutoff voltage limits against circuit biasing needs. Verify that the TO-72 package dimensions fit the available board space and thermal management constraints.
Part Context
This device belongs to the 2N3821/3822/3823 family of N-channel J-FETs. The 2N3821 variant specifically offers higher voltage ratings compared to its counterparts. These components are engineered for demanding environments where standard commercial-grade transistors would fail due to temperature or radiation exposure.
Replacement Considerations
Direct replacements must match the MIL-PRF-19500/375 qualification. Verify pinout compatibility with the TO-72 package. Check if alternative manufacturers offer equivalent electrical parameters for gate-source breakdown and drain current.
