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Product Detailed Parameters
- Description：JFET N-CH 50V TO72
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：50 V
- Drain to Source Voltage (Vdss)：50 V
- Current - Drain (Idss) @ Vds (Vgs=0)：10 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：6 V @ 500 pA
- Input Capacitance (Ciss) (Max) @ Vds：6pF @ 15V
- Resistance - RDS(On)：-
- Power - Max：300 mW
- Operating Temperature：-55°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-206AF, TO-72-4 Metal Can
- Supplier Device Package：TO-72
- Grade：Military
- Qualification：MIL-PRF-19500/375
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Overview
The Microchip Technology 2N3822 is an N-channel silicon junction field-effect transistor (JFET) operating in depletion mode, qualified under MIL-PRF-19500/375. It features a maximum drain-source voltage of 30 V and gate-source voltage of 30 V, with power dissipation rated at 300 mW at +25°C. Electrical characteristics include a zero-gate-voltage drain current range of 2.0 to 10 mA and a gate-source cutoff voltage between 4.0 and 8.0 Vdc. The device exhibits a forward transfer admittance of 3000 to 6500 µS at 1.0 kHz and reverse transfer capacitance of 3.0 pF.
Feature Summary
- Qualified for military standards with four product assurance levels per MIL-PRF-19500.
- Designed for very high frequency band applications using silicon JFET technology.
- Provides low noise performance suitable for sensitive signal processing circuits.
Applications
- RF small-signal amplification
- Low-noise preamplifier stages
- High-frequency switching circuits
Procurement Notes
Verify the specific qualification level required, as the 2N3822 is available in JAN, JANTX, JANTXV, and JANS grades. Confirm package authenticity and lead inspection requirements for aerospace or defense procurement. Ensure ordering suffixes match the desired reliability tier. Request manufacturer test reports if strict compliance with MIL-PRF-19500/375 is mandatory for the application.
Selection Notes
Select the 2N3822 when a moderate pinch-off voltage and higher transconductance are needed compared to the 2N3821. Choose this part over the 2N3823 if operation below 100 MHz is sufficient and lower input capacitance is not the primary constraint. Evaluate thermal derating requirements carefully, as power dissipation decreases linearly above +25°C.
Part Context
The 2N3822 belongs to a family of N-channel depletion-mode JFETs that includes the 2N3821 and 2N3823. These devices share similar physical packages but differ in electrical parameters such as breakdown voltage and transconductance. The series is standardized under MIL-PRF-19500/375, ensuring consistent performance across different manufacturing lots and qualification levels.
Replacement Considerations
Direct substitutes include the 2N3821 and 2N3823 within the same MIL-PRF-19500/375 specification. Verify pinout compatibility in the TO-72 (TO-206AF) package. Check if the alternative device's transconductance and breakdown voltage ranges meet the circuit design margins.
FAQ
What is the maximum drain-source voltage for the 2N3822?
The maximum drain-source voltage (VDS) for the 2N3822 is 30 Vdc.
How does the transconductance of the 2N3822 compare to the 2N3821?
The 2N3822 has a higher minimum forward transfer admittance (3000 µS) compared to the 2N3821 (1500 µS) at 1.0 kHz.
Is the 2N3822 available in surface mount packages?
No, the 2N3822 is specified for the TO-72 (TO-206AF) through-hole metal can package.
