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Product Detailed Parameters
- Description：JFET N-CH 30V TO72
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：30 V
- Current - Drain (Idss) @ Vds (Vgs=0)：20 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：8 V @ 500 pA
- Input Capacitance (Ciss) (Max) @ Vds：6pF @ 15V
- Resistance - RDS(On)：-
- Power - Max：300 mW
- Operating Temperature：-55°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-206AF, TO-72-4 Metal Can
- Supplier Device Package：TO-72
- Grade：Military
- Qualification：MIL-PRF-19500/375
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Overview
The Microchip Technology 2N3823 is an N-channel silicon junction field-effect transistor (JFET) operating in depletion mode. Qualified under MIL-PRF-19500/375, it utilizes a TO-72 (TO-206AF) package. Maximum ratings include a drain-source voltage of 30 V and power dissipation of 300 mW at +25°C. Electrical characteristics specify a zero-gate-voltage drain current range of 4.0 to 20 mA and a gate-source cutoff voltage between 8.0 and 15.0 Vdc. The device supports high-frequency applications with a forward transfer admittance of 3200 µS at 200 MHz.
Feature Summary
- Qualified for military standards ensuring reliability across extreme temperature ranges
- Designed for very high frequency signal processing and amplification
- Provides low noise performance suitable for sensitive RF front-end circuits
Applications
- RF amplifier stages in communication systems
- Low-noise preamplifiers for instrumentation
- High-frequency oscillator circuits
Procurement Notes
Verify the specific ordering suffix to confirm the qualification level, as JAN, JANTX, JANTXV, and JANS variants exist within this specification. Ensure the component meets the required environmental screening and testing criteria defined by the governing military standard before integration into critical systems.
Selection Notes
Select the 2N3823 when a higher zero-gate-voltage drain current and lower input capacitance are required compared to the 2N3821 or 2N3822. Consider the 30 V maximum voltage rating for circuit design limits. Evaluate the specific frequency requirements, as the 2N3823 is optimized for operation up to 200 MHz.
Part Context
This component belongs to a family of N-channel depletion-mode JFETs governed by MIL-PRF-19500/375. It shares the same physical package and basic operational principles with the 2N3821 and 2N3822, differing primarily in electrical parameter tolerances such as drain current and breakdown voltage thresholds.
Replacement Considerations
Direct equivalents must adhere to MIL-PRF-19500/375 specifications. Verify that substitute devices match the TO-72 pinout and thermal characteristics. Cross-reference electrical parameters like IDSS and VGS(off) to ensure compatibility with existing biasing networks.
