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The 2N3823UB/TR is a single N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes silicon technology and is housed in an LCC-3 surface-mount package designed for SMD/SMT installation. The device features a maximum drain-source breakdown voltage of 40 V and a gate-source breakdown voltage of 30 V. Continuous drain current is rated at 175 mA, with a maximum on-resistance of 25 Ohms. Power dissipation capability reaches 1.8 W, supporting operation within a temperature range from -65 °C to +200 °C.
Verify the specific ordering suffix against official Microchip documentation to confirm package type and tape-and-reel specifications. Ensure that the procurement channel provides traceability to the manufacturer. Confirm RoHS compliance status directly through the datasheet or product compliance documents before finalizing acquisition.
Select this component when high-temperature performance exceeding standard commercial limits is required. The LCC-3 package facilitates automated surface-mount assembly processes. Verify that the circuit design accommodates the specified 1.8 W power dissipation and 175 mA continuous current ratings under all operating conditions.
This part belongs to the Microchip JFET portfolio, specifically engineered for robust performance in demanding electronic environments. The UB designation typically indicates a specific configuration within the manufacturer's discrete transistor lineup, focusing on reliability and consistent electrical characteristics across extended temperature ranges.
Consult official Microchip documentation for verified equivalent parts. Cross-reference pinout compatibility and electrical parameters such as breakdown voltages and on-resistance when evaluating alternative components.