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Product Detailed Parameters
- Description：8V 10MA 360MW TH JFET N CHANNEL
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：25 V
- Drain to Source Voltage (Vdss)：25 V
- Current - Drain (Idss) @ Vds (Vgs=0)：2 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：8 V @ 2 nA
- Input Capacitance (Ciss) (Max) @ Vds：8pF @ 15V
- Resistance - RDS(On)：-
- Power - Max：360 mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor 2N3819 TRE TIN/LEAD is an N-channel Junction Field-Effect Transistor (JFET) designed for general-purpose amplification and switching applications. It operates within a drain-source voltage range of up to 25 V and supports a continuous drain current of 100 mA. The device features a typical transconductance of 3000 µS at a drain current of 10 mA, with a maximum gate-source cutoff voltage of -4 V. Power dissipation is rated at 625 mW under standard conditions. The component utilizes a TO-92-3 through-hole package and is supplied in a tape and reel configuration.
Feature Summary
- Provides high input impedance characteristics suitable for low-noise signal processing
- Supports linear amplification and analog switching operations
- Utilizes silicon technology for stable performance across operating temperatures
Applications
- Low-noise audio preamplifiers
- High-impedance buffer circuits
- Analog signal switching matrices
Procurement Notes
Verify the specific ordering suffix against manufacturer documentation to confirm lead-free or tin-lead compliance status. Confirm that the tape and reel packaging matches automated assembly requirements. Validate electrical parameters against the latest datasheet revision prior to integration into production designs.
Selection Notes
Select this component when a JFET with moderate gain and low noise is required for input stages. Ensure the circuit design accommodates the specified gate-source cutoff voltage limits. Verify thermal management capabilities align with the 625 mW power dissipation rating for the intended operating environment.
Part Context
This part belongs to the 2N3819 family of N-channel JFETs manufactured by Central Semiconductor. It serves as a direct replacement for industry-standard equivalents in legacy and new designs requiring discrete field-effect transistor solutions. The TRE designation indicates specific packaging and terminal finish configurations provided by the manufacturer.
Replacement Considerations
Cross-reference with other manufacturers' 2N3819 equivalents such as those from Vishay or ON Semiconductor. Verify pinout compatibility and electrical parameter tolerances before substitution. Ensure the replacement device meets the same package and termination specifications.
