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The Microchip Technology 2N3823UB is a Junction Field-Effect Transistor (JFET) manufactured using silicon technology. It is designed for through-hole mounting in a TO-72 package configuration. The device operates as a single N-channel JFET with a maximum DC drain current of 10 mA and a maximum power dissipation of 500 mW. Key electrical specifications include a maximum drain-source breakdown voltage of 25 V, a gate-source cutoff voltage ranging from -0.5 V to -6 V, and an input impedance of up to 10^9 ohms. The component supports a wide operating temperature range from -65°C to +175°C, ensuring reliability in demanding environments.
Verify the specific suffix UB against the official Microchip datasheet to confirm pinout and mechanical dimensions. Ensure the procurement channel provides valid traceability documentation. Confirm RoHS compliance status directly from the manufacturer's latest release notes before integration into regulated assemblies.
Select this component when high input impedance and low noise are critical requirements. Compare the 2N3823UB against similar JFETs like the 2N5457 or 2N3819 based on specific gain-bandwidth needs. Verify that the TO-72 package fits the available PCB real estate and thermal management constraints of the design.
The 2N3823UB belongs to the standard military-grade JFET family produced by Microchip Technology. These devices are often used in aerospace and defense applications due to their robust construction and wide temperature tolerance. The part is distinct from commercial variants by its stricter screening and qualification standards.
Direct replacements may include the 2N5457 or 2N3819, provided pin compatibility and electrical parameters such as Vgs(off) and Idss are within acceptable tolerances. Always verify functional equivalence through simulation or prototyping before finalizing the substitution.