Single Bipolar Transistors 2N4236 TIN/LEAD product image

2N4236 TIN/LEAD

$1.69
  • Description:80V 3A 1W TH TRANSISTOR-BIPOLAR
  • Series:-

SKU:36a55048d38d Category: Brand:

  
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2N4236 TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 80V 3A 1W TH TRANSISTOR-BIPOLAR. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N4236 TIN/LEAD

  • Description:80V 3A 1W TH TRANSISTOR-BIPOLAR
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Box
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 125mA, 1A
  • Current - Collector Cutoff (Max):1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 100mA, 1V
  • Power - Max:1 W
  • Frequency - Transition:3MHz
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package:TO-39
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2N4236 TIN/LEAD

2N4236 TIN/LEAD

Single Bipolar Transistors Overview

The Central Semiconductor Corp 2N4236 is a silicon NPN small-signal bipolar junction transistor (BJT) housed in a TO-18 metal can package. It features a collector-emitter voltage rating of 15 V, a collector-base voltage of 40 V, and an emitter-base voltage of 4.5 V. The device supports a maximum DC collector current of 500 mA and a power dissipation of 360 mW. Its gain-bandwidth product is specified at 500 MHz, with a collector-emitter saturation voltage of 200 mV.

Single Bipolar Transistors Feature Summary

  • Utilizes silicon technology for stable small-signal amplification
  • Provides high-frequency performance suitable for RF applications
  • Offers robust mechanical protection via a hermetically sealed metal can

Single Bipolar Transistors Applications

  • High-frequency amplifier circuits
  • Switching applications requiring fast response times
  • General-purpose signal processing stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm lead content, as variations exist between tin/lead and lead-free versions. Ensure the TO-18 package dimensions match the target PCB or chassis mounting requirements. Confirm that the manufacturer's datasheet specifications for thermal resistance and maximum junction temperature align with the intended operating environment before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a hermetically sealed metal package is required for environmental durability. The 500 MHz gain-bandwidth product makes it suitable for frequencies where plastic packages may exhibit higher parasitic capacitance. Consider the 500 mA collector current limit and 360 mW power dissipation to ensure adequate thermal management within the circuit design constraints.

Single Bipolar Transistors Part Context

This part belongs to the family of general-purpose NPN transistors manufactured by Central Semiconductor Corp. It is designed for use in low-power, high-speed switching and amplification roles. The TO-18 package provides superior thermal conductivity and radiation hardness compared to standard plastic equivalents, making it a preferred choice for military, aerospace, and industrial applications requiring long-term reliability.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for verified equivalents. Generic replacements must match the TO-18 package, NPN polarity, and electrical ratings including Vceo, Ic, and Ft.

2N4236 TIN/LEAD2N4236 TIN/LEAD
$1.69
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