2N4236

Single Bipolar Transistors Overview

The Microchip Technology 2N4236 is a single PNP bipolar junction transistor (BJT) designed for through-hole mounting in TO-39 metal can packages. It supports a maximum collector current of 1 A and a collector-emitter breakdown voltage of 80 V. The device dissipates up to 1 W of power and operates within a junction temperature range of -65°C to 200°C. Key electrical characteristics include a DC current gain (hFE) minimum of 30 at 250 mA and 1 V, with a collector cutoff current of 1 mA maximum. Saturation voltage is specified at 600 mV maximum under 100 mA base and 1 A collector conditions.

Single Bipolar Transistors Feature Summary

• Utilizes a hermetically sealed TO-39 metal can package for robust physical protection and reliable thermal performance.
• Engineered for high-temperature operation with an extended junction temperature range reaching 200°C.
• Provides standardized PNP switching capabilities with defined saturation voltage and current gain parameters.

Single Bipolar Transistors Applications

• General-purpose switching circuits requiring through-hole PNP transistors
• High-temperature electronic environments utilizing TO-39 metal cans
• Amplifier stages compatible with standard BJT biasing networks

Single Bipolar Transistors Procurement Notes

Verify the specific revision level against the manufacturer's datasheet before integration, as component specifications may evolve. Confirm that the TO-39 pinout matches the target circuit layout, as legacy packages can vary between manufacturers. Ensure compliance with project requirements regarding non-RoHS status, as this part does not meet current environmental directives. Validate thermal management strategies to maintain junction temperatures within the specified operational limits during peak load conditions.

Single Bipolar Transistors Selection Notes

Select the 2N4236 when a ruggedized PNP transistor with a metal case is required for high-reliability applications. Consider its 80 V rating and 1 A current capacity against circuit demands to ensure adequate headroom. Evaluate the TO-39 footprint constraints compared to modern plastic packages. Compare the hFE and saturation voltage specifications against alternative transistors to verify compatibility with existing drive circuits and thermal budgets.

Single Bipolar Transistors Part Context

The 2N4236 belongs to the family of military-grade or high-reliability PNP transistors produced by Microchip Technology. It shares structural similarities with other TO-39 packaged devices like the 2N4232A but differs in specific electrical ratings. This component represents a legacy silicon technology option for designs requiring proven reliability and specific form factors unavailable in contemporary surface-mount technologies.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the 2N4232A from the same manufacturer family. Verify pinout compatibility and electrical parameter overlaps before swapping components. Cross-reference datasheets to ensure equivalent saturation voltages and current gains match the original design intent.